參數(shù)資料
型號(hào)： MBR3040CT
廠商： LITE-ON ELECTRONICS INC
元件分類： 整流器
英文描述： 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/2頁
文件大小： 74K
代理商： MBR3040CT
MBR3030CT thru 3060CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
MBR
3030CT
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
30
200
TJ
Operating Temperature Range
-55 to +150
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 3)
R0JC
2.0
C/W
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
Maximum Forward
Voltage (Note 1)
0.70
V
Voltage Rate of Chang (Rated VR)
TJ =125 C
TJ =25 C
IF=30A @
IF=15A @
IF=30A @
dv/dt
10000
0.72
0.84
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.2
40
mA
TC =100 C
V/us
MBR
3035CT
35
24.5
35
MBR
3040CT
40
28
40
MBR
3045CT
45
31.5
45
MBR
3050CT
50
35
50
MBR
3060CT
60
42
60
0.80
0.85
0.95
TJ =25 C
1.5
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 30 Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
Typical Junction Capacitance
per element (Note 2)
CJ
pF
450
400
C
SEMICONDUCTOR
LITE-ON
REV. 2, Aug-2007, KTHC11
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
O
1.70
1.14
相關(guān)PDF資料
PDF描述
MBR3040PT 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-247AD
MBR3045WT 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AC
MBR3080WT 15 A, 80 V, SILICON, RECTIFIER DIODE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR3040CTE3/TU 制造商:Microsemi Corporation 功能描述:30A, 40V, VF=0.70V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 30A 40V TO220AB
MBR3040F 制造商:ASEMI 制造商全稱:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers
MBR3040FCT 制造商:CTC 制造商全稱:Compact Technology Corp. 功能描述:SCHOTTKY BARRIER RECTIFIERS
MBR3040FCTE3/TU 制造商:Microsemi Corporation 功能描述:30A, 40V, VF=0.70V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 30A 40V ITO220AB
MBR3040PT 功能描述:肖特基二極管與整流器 30A 40V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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