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參數(shù)資料
| 型號： | MBR320 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 20 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, CASE 267-03, 2 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 121K |
| 代理商： | MBR320 |
1
Rectifier Device Data
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
Extremely Low vF
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16
″ from case
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
Polarity: Cathode indicated by Polarity Band
Marking: B320, B330, B340, B350, B360
MAXIMUM RATINGS
Rating
Symbol
MBR320
MBR330
MBR340
MBR350
MBR360
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
50
60
V
Average Rectified Forward Current, TA = 65°C
(R
θJA = 28°C/W, P.C. Board Mounting, see Note 3)
IO
3.0
A
Non–Repetitive Peak Surge Current (2)
(Surge applied at rated load conditions, half wave,
single phase 60 Hz, TL = 75°C)
IFSM
80
A
Operating and Storage Junction
Temperature Range (Reverse Voltage applied)
TJ, Tstg
*65 to 150°C
°C
Peak Operating Junction Temperature
(Forward Current applied)
TJ(pk)
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient (see Note 3, Mounting Method 3)
R
θJA
28
°C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Symbol
MBR320
MBR330
MBR340
MBR350
MBR360
Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
vF
0.500
0.600
0.850
0.600
0.740
1.080
V
Maximum Instantaneous Reverse Current @ Rated dc
Voltage (1)
TL = 25°C
TL = 100°C
iR
0.60
20
mA
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32
″ from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by MBR320/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MBR320
MBR330
MBR340
MBR350
MBR360
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40, 50, 60 VOLTS
CASE 267–03
PLASTIC
MBR340 and MBR360 are
Motorola Preferred Devices
Rev 1
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