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參數(shù)資料
| 型號： | MBR30150CT |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 217K |
| 代理商： | MBR30150CT |
Voltage
45 to 100 V
Current
30 A
May - 09
High current capability
The plastic material
U/L recognition 94 V-0
Terminals: Leads solderable per
MIL-STD202
Low forward Voltage drop
MBR30CT
65 to + 175 °C
30 A
200 A
31
45
65 to + 150 °C
MBR3045CT
45
42
60
1.5 °C/W
0.60 V
0.77 V
0.67 V
MBR3045CT
0.70 V
MBR3060CT
1.0 A
MBR30100CT
0.84 V
0.70 V
30 Amp. Schottky Barrier Rectifier
Absolute Maximum Ratings, according to IEC publication No. 134
Electrical Characteristics
Common Cathode
Suffix "C"
70
100
MBR30100CT
0.5 A
1.0 °C/W
0.73 V
--
0.82 V
0.94 V
0.82 V
15.0 mA
0.20 mA
10.0 mA
7.5 mA
TO-220AB
1
3
2
VF
Max. forward voltage drop
at IF = 15 A
IR
Max. Instantaneous reverse
current at VR = VRRMax
Rthj-c
Typical Thermal Resistance
Tc = 25 °C
Max. forward voltage drop
at IF = 30 A
Tc = 125 °C
Tc = 25 °C
(both diodes conducting)
IRRM
Peak repetitive reverse surge current
Peak recurrent reverse voltage (V)
Maximum RMS voltage (V)
Maximum DC blocking voltage (V)
Maximum average Forward current
VRRM
VRMS
VDC
IF (AV)
Tj
Tstg
Operating temperature range
Storage temperature range
IFSM
8.3 ms. peak forward surge current
(Jedec Method)
at TC = 130 °C
Metal silicon junction, majority carrier
conduction
MBR30150CT
105
150
MBR30150CT
0.95 V
0.92 V
1.02 V
0.98 V
0.10 mA
5.0 mA
Note: 1. Pulse Test: 300s Pulse Width, 1% Duty Cycle
2. Thermal Resistance from Junction to Case Per Leg
(Note 1
)
(Note 1
)
(Note 2
)
相關(guān)PDF資料 |
PDF描述 |
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| MBR3035CT-1PBF | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MBRB3045CTTRR | 15 A, 45 V, SILICON, RECTIFIER DIODE |
| MBRB3035CTTRLP | 15 A, 35 V, SILICON, RECTIFIER DIODE |
| MBR3035S-E3/4W | 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR3060PTL | 30 A, 60 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR30150CT C0 | 功能描述:肖特基二極管與整流器 30A 150V DUAL SCHOTTKY RECTIFIER RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30150CTE3/TU | 制造商:Microsemi Corporation 功能描述:30A, 150V, VF=0.90V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 30A 150V TO220AB |
| MBR30150F | 制造商:ASEMI 制造商全稱:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR30150FCT | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:30 Amp Schottky Barrier Rectifier 150 Volts |
| MBR30150FCTE3/TU | 制造商:Microsemi Corporation 功能描述:30A, 150V, VF=0.90V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 30A 150V ITO220AB |
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