參數(shù)資料
型號(hào)： MBR30060CT
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： 整流器
英文描述： 150 A, 60 V, SILICON, RECTIFIER DIODE
封裝： ROHS COMPLIANT PACKAGE-2
文件頁數(shù)： 1/2頁
文件大?。?/td> 117K
代理商： MBR30060CT
ROHS Compliant
Schottky PowerMod
CPT30060
Baseplate
A=Common Anode
Baseplate
Common Cathode
Baseplate
D=Doubler
Baseplate: Nickel plated
copper
Thermal and Mechanical Characteristics
4300 pF
4.0 mA
75 mA
.68 Volts
.82 Volts
2 Amps
2000 Amps
150 Amps
300 Amps
*Pulse test: Pulse width 300 sec, Duty cycle 2%
Electrical Characteristics
Mounting Base Torque (center hole)
center hole must be torqued first
Weight
Terminal Torque
Typical thermal resistance (greased)
Max thermal resistance per leg
Operating junction temp range
Storage temp range
Maximum repetitive reverse current per leg
Typical junction capacitance per leg
Max peak reverse current per leg
Max peak forward voltage per leg
Maximum surge current per leg
Average forward current per leg
Average forward current per pkg
Mounting Base Torque (outside holes)
C
STG
OCS
OJC
R
TJ
T
J
F(AV)
R(OV)
RM
FSM
V
I
FM
I
FM
V
I
F(AV)
I
Catalog Number
H
Q
60V
Reverse Voltage
Working Peak
*Add Suffix A for Common Anode, D for Doubler
CPT30060*
Microsemi
U
N
W
F
V
E
Notes:
Repetitive Peak
Reverse Voltage
60V
U
C
B
G
R
A
C = 127°C, Square wave,
0JC = 0.40°C/W
C = 127°C, Square wave,
0JC = 0.20°C/W
30-40 inch pounds
2.8 ounces (75 grams) typical
8-10 inch pounds
Case to sink
Junction to case
-55°C to 175°C
R = 5.0V, C = 25°C
RRM, J = 25°C
RRM, J = 125°C*
FM = 200A: J = 175°C*
FM = 200A: J = 25°C*
f = 1 KHZ, 25°C, 1sec square wave
8.3ms, half sine, J = 175°C
35-50 inch pounds
V
0.08°C/W
0.40°C/W
T
I
V
I
T
R
Dia.
1/4-20
Notes
0.800
0.630
0.130
0.510
---
0.290
---
0.195
3.150 BSC
---
.340
N
U 0.600
0.312
0.180
W
V
0.275
---
Q
R
1.375 BSC
0.490
0.010
G
H
F
0.700
---
0.120
C
E
B
34.92 BSC
80.01 BSC
15.24
7.92
4.57
---
6.99
17.78
---
3.05
12.45
0.25
7.37
---
4.95
---
8.64
20.32
16.00
3.30
12.95
---
3.630
Max.
Dim. Inches
Min.
---
A
Millimeters
---
Min.
92.20
Max.
Max thermal resistance per pkg
OJC
R
Junction to case
0.20°C/W
Part Number
MBRP20060CT
Industry
MBRP30060CT
MBR30060CT
MBR20060CT
Reverse Energy Tested
Schottky Barrier Rectifier
Guard Ring Protection
175°C Junction Temperature
300 Amperes/60 Volts
January, 2010 - Rev. 6
www.microsemi.com
相關(guān)PDF資料
PDF描述
MBR30100PT-E3 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD
MBR3090PT 30 A, 90 V, SILICON, RECTIFIER DIODE, TO-247AD
MBR30200CT 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR3040CT 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR3040PT 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-247AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR30060CTR 功能描述:肖特基二極管與整流器 60V 300A Schottky Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR30080CT 功能描述:肖特基二極管與整流器 SI PWR SCHOTTKY 2TWR 20-100V 300A 80P56RV RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR30080CTR 功能描述:肖特基二極管與整流器 SI PWR SCHOTTKY 2TWR 20-100V 300A 80P56RV RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR30100 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:30 Amp Rectifier 20 to 100 Volts Schottky Barrier
MBR30100/3P 制造商:ASEMI 制造商全稱:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers
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