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參數(shù)資料
| 型號(hào)： | MBR2045CTW |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | MBR2045CTW |
MBR2045CTW
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Terminals: Lead Free Plating (Matte Tin Finish)
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 3)
R0JC
2.0
C/W
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
Maximum Forward
Voltage (Note 1)
V
Voltage Rate of Change (Rated VR)
TJ =125 C
TJ =25 C
IF=10A @
IF=20A @
TJ =125 C
dv/dt
0.65
0.57
0.84
0.72
IR
@TJ =100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.02
5
mA
TC =125 C
V/us
MBR2045CTW
45
31.5
45
10000
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 45 Volts
FORWARD CURRENT - 20 Amperes
Typical Junction Capacitance
per element (Note 2)
CJ
300
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
pF
TJ =25 C
SEMICONDUCTOR
LITE-ON
REV. 2, Jan-2011, KTHC91
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