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參數(shù)資料
| 型號： | MBR20100CTL |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 135K |
| 代理商： | MBR20100CTL |
MBR20100CTL
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
– 100 Volts
FORWARD CURRENT
– 20 Amperes
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capability
Plastic package has UL flammability classification
94V-0
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
Case: TO-220AB molded plastic
Polarity : As marked on the body
Weight: 0.08 ounces, 2.24 grams
Mounting position: Any
Max. mounting torque=0.5 N.m(5.1 Kgf.cm)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
MBR20100CTL
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
100
V
Maximum RMS Voltage
VRMS
70
V
Maximum DC Blocking Voltage
VDC
100
V
Average Rectified Output Current
@TC=95°C
IF
20
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
IFSM
150
A
Maximum Forward Voltage
Note(1)
IF=10A@
IF=20A@
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VF
0.85
0.75
0.95
0.85
V
Maximum DC Reverse Current at Rated DC
Blocking Voltage
Tj=25°C
Tj=125°C
IR
0.1
50
mA
Typical Junction Capacitance per element (2)
CJ
250
PF
Typical thermal resistance Junction to Case (3)
RΘJC
3.0
°C/W
Operating junction temperature range
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Note :
REV. 3, Aug-2008, KTHC28
(1)
300us Pulse Width, 2% Duty Cycle.
(2)
Measured at 1.0MHz and applied reverse voltage of 4.0 VDC.
(3)
Thermal Resistance Junction to Case, device mounted on L42 x H25 x W25mm_black Aluminum finny heat sink,
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBR20100CT-LJ | 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY 100V 20A TO220AB |
| MBR20100CT-M3/4W | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 100V 20A 3-Pin(3+Tab) TO-220AB Tube 制造商:Vishay Semiconductors 功能描述:20A,100V,TRENCH SKY RECT. 制造商:Vishay Intertechnologies 功能描述:MBR20100CT Series 100 V 2 x 10 A Through Hole Schottky Rectifier - TO-262-3 制造商:Vishay 功能描述:Diode Schottky 100V 20A 3-Pin(3+Tab) TO-220AB Tube |
| MBR20100CTP | 功能描述:肖特基二極管與整流器 100V 20A RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR20100CTPBF | 功能描述:DIODE SCHOTTKY 100V 10A TO220AB RoHS:是 類別:分離式半導體產(chǎn)品 >> 二極管，整流器 - 陣列 系列:TMBS® 其它有關文件:STTH10LCD06C View All Specifications 標準包裝:1,000 系列:- 電壓 - 在 If 時為正向 (Vf)（最大）:2V @ 5A 電流 - 在 Vr 時反向漏電:1µA @ 600V 電流 - 平均整流 (Io)（每個二極管）:5A 電壓 - (Vr)（最大）:600V 反向恢復時間(trr):50ns 二極管類型:標準 速度:快速恢復 = 200mA（Io） 二極管配置:1 對共陰極 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D²Pak（2 引線+接片），TO-263AB 供應商設備封裝:D2PAK 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1553 (CN2011-ZH PDF) 其它名稱:497-10107-2 |
| MBR20100CTPG | 制造商:ON Semiconductor 功能描述:Diode Schottky 100V 10A 3-Pin(3+Tab) TO-220AB Rail |
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