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參數(shù)資料
| 型號： | MBR20150CT |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 214K |
| 代理商： | MBR20150CT |
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2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MBR20150CT Rev. A1
1
June 2009
MBR20150CT
Dual High Voltage Schottky Rectifier
Features
Low Forward Voltage Drop
Low Power Loss and High Efficiency
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C
Wave Soldering or per MIL-STD-750 Method 2026.
Dual common Cathode.
Absolute Maximum Ratings* T
A = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* TA = 25°C unless otherwise noted
* MIL standard 883-1012 & JESD51-10
Electrical Characteristics* T
A = 25
°
C unless otherwise noted
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
Symbol
Parameter
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
150
V
VR
Maximum DC Reverse Voltage
150
V
IF(AV)
Average Rectified Forward Current, TC=120°C
10 (Per Leg)
20 (Per Device)
A
IFSM
Peak Forward Surge Current, 8.3mS Half Sine wave
150
A
TSTG
Storage Temperature Range
-55 to + 150
°
C
TJ
Operating Junction Temperature
150
°
C
Symbol
Parameter
Max
Unit
RθJC
Thermal Resistance, Junction to Case per Leg
1.5
°
C/W
RθJA
Thermal Resistance, Junction to Ambient per Leg
62.5
°
C/W
Symbol
Parameter
Test Condition
Min.
Max.
Unit
IR
Reverse Current
VR= 150V
TC = 25 °C
TC = 125 °C
0.2
5
mA
VF
Forward Voltage
IF= 10A
IF= 20A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
0.85
0.75
0.95
0.85
V
Mark : MBR20150CT
1
2 3
3. Anode
1. Anode
2. Cathode
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