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參數(shù)資料
| 型號： | MBR160 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Axial Lead Schottky Barrier Power Rectifier(1A,60V軸向引腳肖特基勢壘功率整流器) |
| 中文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | LEAD FREE, PLASTIC, CASE 59-10, 2 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 67K |
| 代理商： | MBR160 |
MBR150, MBR160
http://onsemi.com
4
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heatsink.
Terms in the model signify:
T
A
= Ambient Temperature
T
L
= Lead Temperature
R
S
= Thermal Resistance, HeatsinktoAmbient
R
L
= Thermal Resistance, LeadtoHeatsink
R
J
= Thermal Resistance, JunctiontoCase
P
D
= Power Dissipation
Mounting Method 1
T
C
= Case Temperature
T
J
= Junction Temperature
″
P.C. B x 11/2
Mounting Method 3
″
P.C. B x 11/2
BOAPLANE
VECTOR PIN MOUNTING
Mounting Method 2
éééééééé
L
L
éééééééé
L
L
é
é
é
é
é
L = 3/8
″
(Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
R
L
= 100
°
C/W/in typically and 120
°
C/W/in maximum.
R
J
= 36
°
C/W typically and 46
°
C/W maximum.
NOTE 3. — HIGH FREQUENCY OPERATION:
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to
minority carrier injection and stored charge. Satisfactory
circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable
capacitance. (See Figure 6)
Rectification efficiency measurements show that
operation will be satisfactory up to several megahertz. For
example, relative waveform rectification efficiency is
approximately 70 percent at 2 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction
diodes, the loss in waveform efficiency is not indicative of
power loss: it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
ORDERING INFORMATION
Device
Package
Shipping
MBR150
Axial Lead*
1000 Units / Bag
MBR150G
Axial Lead*
1000 Units / Bag
MBR150RL
Axial Lead*
5000 / Tape & Reel
MBR150RLG
Axial Lead*
5000 / Tape & Reel
MBR160
Axial Lead*
1000 Units / Bag
MBR160G
Axial Lead*
1000 Units / Bag
MBR160RL
Axial Lead*
5000 / Tape & Reel
MBR160RLG
Axial Lead*
5000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently PbFree.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR160_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR160G | 功能描述:肖特基二極管與整流器 1A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR160HWTR | 功能描述:PIV 60V IO 1A VF 0 72V PACKAGE S 制造商:smc diode solutions 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:60V 電流 - 平均整流（Io）:1A 不同 If 時的電壓 - 正向（Vf）:720mV @ 1A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間（trr）:- 不同?Vr 時的電流 - 反向漏電流:300μA @ 60V 不同?Vr，F(xiàn) 時的電容:30pF @ 5V，1MHz 安裝類型:表面貼裝 封裝/外殼:SOD-123 供應(yīng)商器件封裝:SOD-123 工作溫度 - 結(jié):-55°C ~ 125°C 標(biāo)準(zhǔn)包裝:1 |
| MBR160RL | 功能描述:肖特基二極管與整流器 1A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR160RLG | 功能描述:肖特基二極管與整流器 1A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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