參數(shù)資料
型號(hào): MBR2045CTP
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Power Rectifier(20A,45V肖特基勢(shì)壘功率整流器)
中文描述: 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC, CASE 221A-09, 4 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 38K
代理商: MBR2045CTP
Semiconductor Components Industries, LLC, 2000
December, 2000 – Rev. 1
1
Publication Order Number:
MBR2045CTP/D
MBR2045CTP
SWITCHMODE
Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier
metal. These state–of–the–art devices have the following features:
Guardring for Stress Protection
Low Forward Voltage
150
°
C Operating Junction Temperature
Epoxy Meets UL94, VO at 1/8
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: B2045P
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 135
°
C)
I
F(AV)
20
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz,
T
C
= 135
°
C)
Per Diode Leg
I
FRM
20
A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge
Current (2.0 s, 1.0 kHz)
I
RRM
1.0
A
Storage Temperature Range
T
stg
–65 to +175
°
C
Operating Junction Temperature
T
J
–65 to +150
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
Device
Package
Shipping
ORDERING INFORMATION
MBR2045CTP
TO–220
http://onsemi.com
CASE 221A
TO–220AB
PLASTIC
50 Units/Rail
3
4
1
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
45 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
B2045P
LLYWW
B2045P= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
相關(guān)PDF資料
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MBR2045CT Schottky Barrier Power Rectifier(20A,45V肖特基勢(shì)壘功率整流器)
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參數(shù)描述
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