參數(shù)資料
型號： MBR120100CT
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： 整流器
英文描述： 100 A, 100 V, SILICON, RECTIFIER DIODE
封裝： ROHS COMPLIANT PACKAGE-2
文件頁數(shù)： 1/2頁
文件大?。?/td> 117K
代理商： MBR120100CT
ROHS Compliant
Schottky PowerMod
Thermal and Mechanical Characteristics
4.0 mA
75 mA
2 Amps
2000 Amps
Electrical Characteristics
*Pulse test: Pulse width 300sec, Duty cycle 2%
Baseplate: Nickel plated
copper
D=Doubler
Baseplate
Common Cathode
Baseplate
A=Common Anode
Baseplate
0.98 Volts
.86 Volts
3000 pF
CPT20080-CPT200100
200 Amps
100 Amps
Mounting Base Torque (center hole)
center hole must be torqued first
Weight
Mounting Base Torque (outside holes)
Terminal Torque
Typical thermal resistance (greased)
Max thermal resistance per leg
Operating junction temp range
Storage temp range
Maximum repetitive reverse current per leg
Typical junction capacitance per leg
Max peak reverse current per leg
Typical forward voltage per leg
Max peak forward voltage per leg
Maximum surge current per leg
Average forward current per leg
Average forward current per pkg
C
STG
OCS
OJC
R
TJ
T
J
F(AV)
R(OV)
RM
FSM
V
I
FM
I
FM
V
I
F(AV)
I
Catalog Number
H
Q
Reverse Voltage
Working Peak
*Add Suffix A for Common Anode, D for Doubler
80V
90V
100V
CPT200100*
CPT20090*
CPT20080*
Microsemi
U
N
W
F
V
E
Notes:
Repetitive Peak
Reverse Voltage
80V
90V
100V
U
C
B
G
R
A
C = 135°C, Square wave,
0JC =0.20°C/W
C = 135°C, Square wave,
0JC =0.40°C/W
30-40 inch pounds
8-10 inch pounds
2.8 ounces (75 grams) typical
Case to sink
Junction to case
-55°C to 175°C
35-50 inch pounds
R = 5.0V, C = 25°C
RRM, J = 25°C
RRM, J = 125°C*
FM = 200A: J = 175°C*
FM = 200A: J = 25°C*
f = 1 KHZ, 25°C, 1sec square wave
8.3ms, half sine, J = 175°C
V
0.08°C/W
0.40°C/W
T
I
V
I
T
R
Dia.
Notes
1/4-20
175 C Junction Temperature
Reverse Energy Tested
Guard Ring Protection
Schottky Barrier Rectifier
0.800
0.630
0.130
0.510
---
0.290
---
0.340
0.195
3.150 BSC
---
200 Amperes/ 80 to 100 Volts
N
U 0.600
0.312
0.180
W
V
0.275
---
Q
R
1.375 BSC
0.490
0.010
G
H
F
0.700
---
0.120
C
E
B
34.92 BSC
80.01 BSC
15.24
7.92
4.57
---
6.99
17.78
---
3.05
12.45
0.25
7.37
---
8.64
4.95
---
20.32
16.00
3.30
12.95
---
Dim. Inches
3.630
Max.
Min.
---
A
Millimeters
---
Min.
92.20
Max.
Max thermal resistance per pkg
OJC
R
Junction to case
0.20°C/W
Part Number
203CNQ080
Industry
MBR12080CT
MBR20080CT
MBR120100CT
MBR200100CT
203CNQ100
January, 2010 - Rev. 4
www.microsemi.com
相關PDF資料
PDF描述
MBR200100CTA 100 A, 100 V, SILICON, RECTIFIER DIODE
MBR12080CTA 100 A, 80 V, SILICON, RECTIFIER DIODE
MBR1635 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR1635 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC
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相關代理商/技術參數(shù)
參數(shù)描述
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