參數(shù)資料
型號： MBR12080CTA
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： 整流器
英文描述： 100 A, 80 V, SILICON, RECTIFIER DIODE
封裝： ROHS COMPLIANT PACKAGE-2
文件頁數(shù)： 1/2頁
文件大?。?/td> 117K
代理商： MBR12080CTA
ROHS Compliant
Schottky PowerMod
Thermal and Mechanical Characteristics
4.0 mA
75 mA
2 Amps
2000 Amps
Electrical Characteristics
*Pulse test: Pulse width 300sec, Duty cycle 2%
Baseplate: Nickel plated
copper
D=Doubler
Baseplate
Common Cathode
Baseplate
A=Common Anode
Baseplate
0.98 Volts
.86 Volts
3000 pF
CPT20080-CPT200100
200 Amps
100 Amps
Mounting Base Torque (center hole)
center hole must be torqued first
Weight
Mounting Base Torque (outside holes)
Terminal Torque
Typical thermal resistance (greased)
Max thermal resistance per leg
Operating junction temp range
Storage temp range
Maximum repetitive reverse current per leg
Typical junction capacitance per leg
Max peak reverse current per leg
Typical forward voltage per leg
Max peak forward voltage per leg
Maximum surge current per leg
Average forward current per leg
Average forward current per pkg
C
STG
OCS
OJC
R
TJ
T
J
F(AV)
R(OV)
RM
FSM
V
I
FM
I
FM
V
I
F(AV)
I
Catalog Number
H
Q
Reverse Voltage
Working Peak
*Add Suffix A for Common Anode, D for Doubler
80V
90V
100V
CPT200100*
CPT20090*
CPT20080*
Microsemi
U
N
W
F
V
E
Notes:
Repetitive Peak
Reverse Voltage
80V
90V
100V
U
C
B
G
R
A
C = 135°C, Square wave,
0JC =0.20°C/W
C = 135°C, Square wave,
0JC =0.40°C/W
30-40 inch pounds
8-10 inch pounds
2.8 ounces (75 grams) typical
Case to sink
Junction to case
-55°C to 175°C
35-50 inch pounds
R = 5.0V, C = 25°C
RRM, J = 25°C
RRM, J = 125°C*
FM = 200A: J = 175°C*
FM = 200A: J = 25°C*
f = 1 KHZ, 25°C, 1sec square wave
8.3ms, half sine, J = 175°C
V
0.08°C/W
0.40°C/W
T
I
V
I
T
R
Dia.
Notes
1/4-20
175 C Junction Temperature
Reverse Energy Tested
Guard Ring Protection
Schottky Barrier Rectifier
0.800
0.630
0.130
0.510
---
0.290
---
0.340
0.195
3.150 BSC
---
200 Amperes/ 80 to 100 Volts
N
U 0.600
0.312
0.180
W
V
0.275
---
Q
R
1.375 BSC
0.490
0.010
G
H
F
0.700
---
0.120
C
E
B
34.92 BSC
80.01 BSC
15.24
7.92
4.57
---
6.99
17.78
---
3.05
12.45
0.25
7.37
---
8.64
4.95
---
20.32
16.00
3.30
12.95
---
Dim. Inches
3.630
Max.
Min.
---
A
Millimeters
---
Min.
92.20
Max.
Max thermal resistance per pkg
OJC
R
Junction to case
0.20°C/W
Part Number
203CNQ080
Industry
MBR12080CT
MBR20080CT
MBR120100CT
MBR200100CT
203CNQ100
January, 2010 - Rev. 4
www.microsemi.com
相關(guān)PDF資料
PDF描述
MBR1635 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR1635 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR1640 16 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR1650 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR1630 16 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR12080CTR 功能描述:肖特基二極管與整流器 SI PWR SCHOTTKY 2TWR 20-100V 120A 80P56RV RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR12080R 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 120A
MBR120ESFT1 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR120ESFT1_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier
MBR120ESFT1G 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*