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參數(shù)資料
| 型號： | MBR1070 |
| 廠商： | LITE-ON ELECTRONICS INC |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 70 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 71K |
| 代理商： | MBR1070 |
MBR1070 thru 10100
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
VF
Maximum Average Forward
Rectified Current (See Fig.1)
@TC
=135 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
10
150
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
2.0
C/W
TJ =25 C
CJ
Typical Junction Capacitance (Note 3)
1100
pF
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
100
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Voltage Rate of Change (Rated VR)
TJ =125 C
R0JC
dv/dt
10000
V/us
IF =10A @
IF =20A @
MBR1070
70
49
70
V
0.85
0.75
0.80
NOTES : 1.300us Pulse Width, 2% Duty Cycle.
2.Thermal Resistance Junction to Case.
3.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
TO-220AC
All Dimensions in millimeter
TO-220AC
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
5.33
N
M
L
K
J
I
1.14
4.83
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
A
B
C
K
J
I
G
F
E
D
N
M
L
H
PIN 1
PIN 2
CASE
PIN
1
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 10 Amperes
MBR10100
100
70
100
MBR1090
90
63
90
MBR1080
80
56
80
TJ =125 C
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
REV. 1, Aug-2007, KTHA12
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR1090 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1060 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1090 | 10 A, 90 V, SILICON, RECTIFIER DIODE |
| MBR10H100/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR120100CT | 100 A, 100 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR1070CT | 功能描述:肖特基二極管與整流器 10A 70V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1070CT_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
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| MBR1080 _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR1080_B0_10001#DELETED BY PJT# | 制造商:PanJit Touch Screens 功能描述: |
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