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參數(shù)資料
| 型號： | MBN400C20 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 400 A, 2000 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 63K |
| 代理商： | MBN400C20 |
1000
01
3
4
2
567
9
810
500
0
TYPICAL
Collector
Current,
Ic
(A)
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Switching
Time
,td(on),
tr
,td(off),
tf
,trr
(
s)
F
orw
ard
Current,
I
F
(A)
Collector Current, IC(A)
Switching time vs. Collector current
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
Cies
,Coes
,Cres(nF)
Collector to Emitter Voltage, VCE (V)
Capacitance vs. Collector to Emitter Voltage
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-N400C20-0
14V
13V
tr
tf
td(off)
full
10%
trr
12V
11V
10V
9V
8V
7V
Tc
=25°C
VGE
=15V
1000
01
34
25
6
7
9
810
500
0
TYPICAL
7V
8V
9V
10V
11V
12V
13V
14V
VGE
=15V
Tc
=125°C
5
4
3
2
1
0
200
100
300
400
500
0
TYPICAL
T
u
rn-on
Loss
Eon
(J/pulse)
Collector Current IC (A)
Turn-on Loss vs. Collector Current
0.5
0.4
0.3
0.2
0.1
0
200
100
300
400
500
0
TYPICAL
1000
01
3
4
25
500
0
TYPICAL
VGE
=0
Tc
=25°C
Tc
=125°C
1000
100
1
10
100
10
1
0.1
TYPICAL
Cies
Coes
Cres
[Conditions]
VGE
=0
f
=100KHz
Tc
=25°C
[Conditions]
Tc
=125°C
VCC
=1000V
Lp
≈200nH
RG(on)
=12
RG(off)
=12
VGE
=±15V
Inductive Load
[Conditions]
Tc
=125°C
VCC
=1000V
Lp
≈200nH
RG(on)
=12
RG(off)
=12
VGE
=±15V
Inductive Load
td(on)
t1
t3
t4
0
10%
VGE
IC
IC VCE dt
Eon(10%)
=
Eon(full)
=
VCE
0
t2
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBN400C33A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
| MBN400GR12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Rated 400A/1200V, Single-pack type |
| MBN400GR12AW | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
| MBN400GR12BW | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
| MBN400GS12AW | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
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