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參數(shù)資料
| 型號： | MBN400C20 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 400 A, 2000 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 63K |
| 代理商： | MBN400C20 |
PDE-N400C20-0
IGBT MODULE
MBN400C20
Silicon N-channel IGBT
OUTLINE DRAWING
FEATURES
* High thermal fatigue durability.
(delta Tc=70
°C,N>20,000cycles)
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
*High speed,low loss IGBT module.
*Low driving power due to low input
capacitance MOS gate.
*High reliability,high durability module.
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
°C )
Item
Symbol
Unit
MBN400C20
Collector Emitter Voltage
VCES
V
2,000
Gate Emitter Voltage
VGES
V
±20
Collector Current
DC
IC
400
1ms
ICp
A
800
Forward Current
DC
IF
400
1ms
IFM
A
800
Collector Power Dissipation
Pc
W
3,000
Junction Temperature
Tj
°C
-40 ~ +125
Storage Temperature
Tstg
°C
-40 ~ +125
Isolation Voltage
VISO
VRMS
4,000(AC 1 minute)
Screw Torque
Terminals(M4/M8)
-
2/10
(1)
Mounting(M5)
-
N.m
2.8
(2)
Notes: (1)Recommended Value 1.8
±0.2/9±1N.m
(2)Recommended Value 2.6
±0.2N.m
CHARACTERISTICS
(Tc=25
°C )
Item
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Collector Emitter Cut-Off Current
I CES
mA
-
4.0
VCE=2,000V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
±200 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage
VCE(sat)
V-
4.2
5.2
IC=400A,VGE=15V
Gate Emitter Threshold Voltage
VGE(TO)
V
4.0
5.1
7.0
VCE=10V, IC =400mA
Input Capacitance
Cies
nF
-
46
100
VCE=10V,VGE=0V,f=100KHz
Rise Time
tr
-1.4
2.3
VCC=1,000V,Ic=400A
Turn On Time
ton
-
1.7
2.6
L=200nH
Fall Time
tf
-1.8
2.4
RG=12
W
(3)
Switching Times
Turn Off Time
toff
ms
-4.0
5.9
VGE=
±15V Tc=125°C
Peak Forward Voltage Drop
VFM
V-
2.4
3.4
-Ic=400A,VGE=0V
Reverse Recovery Time
trr
ms
-
0.5
0.9
Vcc=1,000V,
-Ic=400A,L=200nH,
Tc=125
°C (4)
IGBT
Rth(j-c)
-
0.033
Thermal Impedance
FWD
Rth(j-c)
°C/W
-
0.10
Junction to case
Notes:(3)
RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
(4) Counter arm IGBT
VGE=
-15V
Weight: 350 (g)
TERMINALS
E
C
G
E
Unit in mm
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| MBN600C33A | 600 A, 3300 V, N-CHANNEL IGBT |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBN400C33A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
| MBN400GR12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Rated 400A/1200V, Single-pack type |
| MBN400GR12AW | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
| MBN400GR12BW | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
| MBN400GS12AW | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
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