參數(shù)資料
型號： MBN1200D33C
元件分類： IGBT 晶體管
英文描述： 1200 A, 3300 V, N-CHANNEL IGBT
封裝： MODULE-9
文件頁數(shù)： 1/4頁
文件大?。?/td> 307K
代理商： MBN1200D33C
IGBT MODULE
MBN1200D33C
Silicon N-channel IGBT
OUTLINE DRAWING
6-M8
3-M4
8-
φ7
WeightF 1,200g
Unit in mm
FEATURES
High speed, low loss IGBT module.
Low driving power due to low input
capacitance MOS gate.
Low noise due to ultra soft fast recovery diode.
High reliability, high durability module.
High thermal fatigue durability.
(delta Tc=70
°C, N>20,000cycles)
Isolated head sink (terminal to base).
CIRCUIT DIAGRAM
TERMINALS
G
E
EEE
C
CCC
ABSOLUTE MAXIMUM RATINGS (Tc=25
o
C
)
Item
Symbol
Unit
MBN1200D33C
Collector Emitter Voltage
VCES
V
3,300
Gate Emitter Voltage
VGES
V
±20
DC
IC
1,200
Collector Current
1ms
ICp
A
2,400
DC
IF
1,200
Forward Current
1ms
IFM
A
2,400
Junction Temperature
Tj
oC
-40 ~ +125
Storage Temperature
Tstg
oC
-40 ~ +125
Isolation Voltage
VISO
VRMS
6,000(AC 1 minute)
Terminals (M4/M8)
-
2/10
(1)
Screw Torque
Mounting (M6)
-
Nm
6
(2)
Notes: (1) Recommended Value 1.8
±0.2/9±1Nm
(2) Recommended Value 5.5
±0.5Nm
ELECTRICAL CHARACTERISTICS
Item
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
-
12
VCE=3,300V, VGE=0V, Tj=25
oC
Collector Emitter Cut-Off Current
I CES
mA
-
30
60
VCE=3,300V, VGE=0V, Tj=125
oC
Gate Emitter Leakage Current
IGES
nA
-500
-
+500 VGE=±20V, VCE=0V, Tj=25
oC
Collector Emitter Saturation Voltage
VCE(sat)
V
-
4.8
5.4
IC=1,200A, VGE=15V, Tj=125
oC
Gate Emitter Threshold Voltage
VGE(TO)
V
4.0
5.5
6.5
VCE=10V, IC=1,200mA, Tj=25
oC
Input Capacitance
Cies
nF
-
140
-
VCE=10V, VGE=0V, f=100kHz, Tj=25
oC
Rise Time
tr
-
2.0
3.2
VCC=1,650V, Ic=1,200A
Turn On Time
ton
-
2.9
3.8
L=100nH
Fall Time
tf
-
1.7
3.2
RG=3.3
(3)
Switching Times
Turn Off Time
toff
s
-
3.5
5.6
VGE=±15V, Tj=125
oC
Peak Forward Voltage Drop
VFM
V
-
2.5
2.75
Ic=1,200A, VGE=0V, Tj=125
oC
Reverse Recovery Time
trr
s
-
0.8
1.4
Vcc=1,650V, Ic=1,200A, L=100nH
Tj=125
oC
Turn On Loss
Eon(10%)
J/P
2.1
2.75
Turn Off Loss
Eoff(10%)
J/P
1.6
2.1
Reverse Recovery Loss
Err(10%)
J/P
1.5
2.1
VCC=1,650V, Ic=1,200A, L=100nH
RG=3.3
(3)
VGE=±15V, Tj=125
oC
IGBT
Rth(j-c)
-
0.008
Thermal Impedance
FWD
Rth(j-c)
oC/W
-
0.016
Junction to case
Notes:(3) RG value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
PDE-N1200D33C-1
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