參數(shù)資料
型號: MBM29F800TA-90PFTR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
中文描述: 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
封裝: PLASTIC, REVERSE, TSOP1-48
文件頁數(shù): 44/48頁
文件大?。?/td> 537K
代理商: MBM29F800TA-90PFTR
44
MBM29F800TA
-55/-70/-90
/MBM29F800BA
-55/-70/-90
I
ERASE AND PROGRAMMING PERFORMANCE
I
TSOP PIN CAPACITANCE
Note:
Test conditions T
A
= 25°C, f = 1.0 MHz
I
SOP PIN CAPACITANCE
Note:
Test conditions T
A
= 25°C, f = 1.0 MHz
Parameter
Limits
Unit
Comments
Min.
Typ.
Max.
Sector Erase Time
1
8
sec
Excludes 00H programming
prior to erasure
Word Programming Time
16
200
μs
Excludes system-level
overhead
Byte Programming Time
8
150
μs
Chip Programming Time
8.4
20
sec
Excludes system-level
overhead
Erase/Program Cycle
100,000
cycles
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
8
10
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
10
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
8.5
12.5
pF
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
8
10.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
10
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
8.5
12.5
pF
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