- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377946 > MBM29F800TA-70PFTN (FUJITSU LTD) 8M (1M X 8/512K X 16) BIT PDF資料下載
參數(shù)資料
| 型號： | MBM29F800TA-70PFTN |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 8M (1M X 8/512K X 16) BIT |
| 中文描述： | 512K X 16 FLASH 5V PROM, 70 ns, PDSO48 |
| 封裝： | PLASTIC, TSOP1-48 |
| 文件頁數(shù)： | 3/48頁 |
| 文件大?。?/td> | 537K |
| 代理商： | MBM29F800TA-70PFTN |
第1頁第2頁當(dāng)前第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁
3
MBM29F800TA
-55/-70/-90
/MBM29F800BA
-55/-70/-90
I
GENERAL DESCRIPTION
The MBM29F800TA/BA is a 8M-bit, 5.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K
words of 16 bits each. The MBM29F800TA/BA is offered in a 48-pin TSOP(I) and 44-pin SOP packages. This
device is designed to be programmed in-system with the standard system 5.0 V V
CC
supply. 12.0 V V
PP
is not
required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
The standard MBM29LV800TA/BA offers access times 55 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29F800TA/BA is pin and command set compatible with JEDEC standard E
2
PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the devices
is similar to reading from12.0 V Flash or EPROM devices.
The MBM29F800TA/BA is programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the device automatically times the erase pulse widths and
verifies proper cell margin.
Any individual sector is typically erased and verified in 1.0 second (if already completely preprogrammed.).
The devices also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29F800TA/BA is erased when shipped from the factory.
The devices features single 5.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
7
,
by the Toggle Bit feature on DQ
6
, or the RY/BY output pin. Once the end of a program or erase cycle has been
completed, the device internally resets to the read mode.
Fujitsu’s Flash technology combines years of EPROM and E
2
PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29F800TA/BA memory electrically erase the entire chip or
all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one
byte/word at a time using the EPROM programming mechanism of hot electron injection.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F800TA-70PFTR | 8M (1M X 8/512K X 16) BIT |
| MBM29F800TA-90PF | Replaced by TPS2045A : 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85 |
| MBM29F800TA-90PFTN | 8M (1M X 8/512K X 16) BIT |
| MBM29F800TA-90PFTR | 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85 |
| MBM29F800BA-55 | LED Lamp; Bulb Size:T-1; LED Color:Red; Luminous Intensity:12ucd; Viewing Angle:50 ; Forward Current:20mA; Forward Voltage:2V; Operating Temperature Range:-40 C to +85 C; Color:Red; Leaded Process Compatible:Yes; Lens Color:Clear RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F800TA-70PFTN-SFL(E1) | 制造商:Fujitsu 功能描述: |
| MBM29F800TA-70PFTN-SFLE1 | 制造商:Spansion 功能描述:IC 5V 8M FLASH |
| MBM29F800TA-70PFTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29F800TA-90 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29F800TA-90PF | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。