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參數(shù)資料
| 型號： | MBM29F160TE-55 |
| 廠商： | Fujitsu Limited |
| 英文描述： | Replaced by TPS2042B : 0.7A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85 |
| 中文描述： | 16米（2米x 8/1M × 16）位 |
| 文件頁數(shù)： | 1/53頁 |
| 文件大小： | 577K |
| 代理商： | MBM29F160TE-55 |
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DS05-20879-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M
×
8/1M
×
16) BIT
MBM29F160TE/BE
-55/-70/-90
I
GENERAL DESCRIPTION
The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
programmed in-system with the standard system 5.0 V V
CC
supply. 12.0 V V
PP
is not required for write or erase
operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F160TE/BE offers access times of 55 ns, 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29F160TE/BE is pin and command set compatible with JEDEC standard E
2
PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
(Continued)
I
PRODUCT LINE UP
I
PACKAGES
Part No.
MBM29F160TE/160BE
Ordering Part No.
V
CC
= 5.0 V
±
5%
V
CC
= 5.0 V
±
10%
-55
—
—
—
-70
-90
Max. Address Access Time (ns)
55
70
90
Max. CE Access Time (ns)
55
70
90
Max. OE Access Time (ns)
30
30
40
48-pin plastic TSOP (I)
Marking Side
(FPT-48P-M20)
Marking Side
(FPT-48P-M19)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F160BE-55 | 16M (2M X 8/1M X 16) BIT |
| MBM29F160BE-70 | 16M (2M X 8/1M X 16) BIT |
| MBM29F160BE-90 | 16M (2M X 8/1M X 16) BIT |
| MBM29F200BA12 | 2M (256K×8/128K×16) Bit Flash Memory(單5V 電源電壓256K×8/128K×16閃速存儲器) |
| MBM29F200BA70 | 2M (256K×8/128K×16) Bit Flash Memory(單5V 電源電壓256K×8/128K×16閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F160TE-55PFTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29F160TE-55PFTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29F160TE-55TN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29F160TE-55TR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29F160TE70 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT |
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