參數(shù)資料
型號： MBM29F200BA12
廠商： Fujitsu Limited
英文描述： 2M (256K×8/128K×16) Bit Flash Memory(單5V 電源電壓256K×8/128K×16閃速存儲器)
中文描述： 200萬（256K × 8/128K × 16）位快閃記憶體（單5V的電源電壓256K × 8/128K × 16閃速存儲器）
文件頁數(shù)： 1/49頁
文件大?。?/td> 603K
代理商： MBM29F200BA12
DS05-20813-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
2M (256K
×
8/128K
×
16) BIT
MBM29F200TA
-70/-90/-12
/MBM29F200BA
-70/-90/-12
I
FEATURES
Single 5.0 V read, write, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
Minimum 100,000 write/erase cycles
High performance
70 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program Algorithms
Automatically write and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/BUSY output (RY/BY)
Hardware method for detection of program or erase cycle completion.
Low V
CC
write inhibit
≤
3.2 V
Hardware RESET pin
Resets internal state machine to the read mode
Sector protection
Hardware method disables any combination of sectors from write or erase operations
Temporary sector unprotection
Hardware method temporarily enable any combination of sectors from write or erase operations
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
2
PROMs
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關(guān)PDF資料
PDF描述
MBM29F200BA70 2M (256K×8/128K×16) Bit Flash Memory(單5V 電源電壓256K×8/128K×16閃速存儲器)
MBM29F200BA90 2M (256K×8/128K×16) Bit Flash Memory(單5V 電源電壓256K×8/128K×16閃速存儲器)
MBM29F200TA12 2M (256K×8/128K×16) Bit Flash Memory(單5V 電源電壓256K×8/128K×16閃速存儲器)
MBM29F200TA70 2M (256K×8/128K×16) Bit Flash Memory(單5V 電源電壓256K×8/128K×16閃速存儲器)
MBM29F200TA90 2M (256K×8/128K×16) Bit Flash Memory(單5V 電源電壓256K×8/128K×16閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F200BC-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT
MBM29F200BC-55PF 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT
MBM29F200BC-55PFTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT
MBM29F200BC-55PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT
MBM29F200BC-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT
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