參數(shù)資料
型號(hào): MBM29F080-90
廠商: Fujitsu Limited
英文描述: 8M (1M ×8) BIT Flash Memory(1M ×8 位5V 電源電壓閃速存儲(chǔ)器)
中文描述: 8米(1米× 8)位快閃記憶體(1米× 8位5V的電源電壓閃速存儲(chǔ)器)
文件頁數(shù): 20/50頁
文件大小: 667K
代理商: MBM29F080-90
20
MBM29F080
-90/-12
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = V
IL
, CE = V
IH
or WE = V
IH
. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
Power-Up Write Inhibit
Power-up of the device with WE = CE = V
IL
and OE = V
IH
will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the read mode on power-up.
相關(guān)PDF資料
PDF描述
MBM29F080A-55 8M (1M X 8) BIT
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