參數(shù)資料
型號: MBM29F040A
廠商: Fujitsu Limited
英文描述: 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲器)
中文描述: 4分(為512k × 8)位快閃記憶體(單5V的電源電壓為512k × 8位閃速存儲器)
文件頁數(shù): 14/19頁
文件大?。?/td> 286K
代理商: MBM29F040A
14
MBM29F040A
-90-X/-12-X
Write/Erase/Program Operations
Alternate CE Controlled Writes
Note: This does not include the preprogramming time.
Parameter Symbols
Description
-90-X
-12-X
Unit
JEDEC
Standard
t
AVAV
t
WC
Write Cycle Time
Min.
90
120
ns
t
AVEL
t
AS
Address Set Up Time
Min.
0
0
ns
t
ELAX
t
AH
Address Hold Time
Min.
45
50
ns
t
DVEH
t
DS
Data Set Up Time
Min.
45
50
ns
t
EHDX
t
DH
Data Hold Time
Min.
0
0
ns
t
OES
Output Enable Set Up Time
Min.
0
0
ns
t
OEH
Output Enable
Hold Time
Read
Min.
0
0
ns
Toggle and Data Polling
Min.
10
10
ns
t
GHEL
t
GHEL
Read Recover Time Before Write
Min.
0
0
ns
t
WLEL
t
WS
WE Set Up Time
Min.
0
0
ns
t
EHWH
t
WH
WE Hold Time
Min.
0
0
ns
t
ELEH
t
CP
CE Pulse Width
Min.
45
50
ns
t
EHEL
t
CPH
CE Pulse Width High
Min.
20
20
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ.
16
16
μ
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note)
Typ.
1.5
1.5
sec
Max.
30
30
sec
t
VCS
V
CC
Set Up Time
Min.
50
50
μ
s
相關PDF資料
PDF描述
MBM29F040C 4M (512K X 8) BIT
MBM29F040C-55 Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85
MBM29F040C-55PD 4M (512K X 8) BIT
MBM29F040C-55PFTN Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
MBM29F040C-55PFTR Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
相關代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F040A-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040A-12-X 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040A-90-X 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040C 制造商:FUJRTSU 功能描述:
MBM29F040C-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT