- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄95880 > MBM100GR12A 100 A, 1200 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號(hào)： | MBM100GR12A |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 126K |
| 代理商： | MBM100GR12A |
1.5
1
0.5
0
50
100
150
TYPICAL
Switching
Time
,t
(
s)
Collector Current, IC (A)
Switching time vs. Collector current
ton
toff
Vcc
=600V
VGE
=±15V
RG
=12
TC
=25°C
Inductive Load
20
15
10
5
0
50
100
150
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Collector Current. IC (A)
Switching loss vs. Collector current
10
0.1
1
0.01
1
10
100
Switching
Time
,t
(
s)
Gate Resistance, RG (
)
Switching time vs. Gate resistance
ton
toff
VCC
=600V
VGE
=±15V
IC
=100A
TC
=25°C
Inductive Load
TYPICAL
100
10
1
0.1
1
10
100
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Gate Resistance. RG (
)
Switching loss vs. Gate resistance
VCC
=600V
VGE
=±15V
IC
=100A
TC
=125°C
Inductive Load
Err
Eton
Etoff
VCC
=600V
VGE
=±15V
RG
=12
TC
=125°C
Inductive Load
1000
100
10
1
0.1
0
200
400
600
800
1000
1200
1400
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.01
0.1
1
10
T
ransient
Ther
mal
Impedance
,R
th(j-c)
(
°C/W
)
Time, t (s)
Transient thermal impedance
Diode
IGBT
VGE
=±15V
RG
=12
TC
≤125°C
PDE-M100GR12A-0
tf
tr
tf
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM150GR12A | 150 A, 1200 V, N-CHANNEL IGBT |
| MBM150GR12A | 150 A, 1200 V, N-CHANNEL IGBT |
| MBM150GS12EBW | IGBT |
| MBM150GS6AW | 150 A, 600 V, N-CHANNEL IGBT |
| MBM200GR12A | 200 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM10415AH | 制造商:FC 功能描述: |
| MBM10422A7 | 制造商:FUJI 功能描述:* |
| MBM10470A-10 | 制造商:FUJITSU 功能描述: 制造商:F/C 功能描述: |
| MBM10470A-15 | 制造商:FUJITSU 功能描述: |
| MBM10474A-15 | 制造商:F/C 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。