
PDE-M150GS6AW-0
IIIIG
G
GB
B
BT
TT
T M
M
MOD
OD
ODU
U
UL
LL
LE
E
MBM150GS6AW
Silicon N-channel IGBT
OUTLINE DRAWING
F
FF
FEA
EA
EAT
TT
TU
U
URE
RE
RES
SS
S
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Item
Symbol
Unit
MBM150GS6AW
Collector Emitter Voltage
VCES
V
600
Gate Emitter Voltage
VGES
V
±20
Collector Current
DC
IC
150
(1)
1ms
ICp
A
300
Forward Current
DC
IF
150
1ms
IFM
A
300
Collector Power Dissipation
Pc
W
450
Junction Temperature
Tj
°C
-40 ~ +150
Storage Temperature
Tstg
°C
-40 ~ +125
Isolation Voltage
VISO
VRMS
2,500(AC 1 minute)
Screw Torque
Terminals
-
1.96(20)
(2)
Mounting
-
N.m
(kgf.cm)
1.96(20)
(3)
Notes:(1)RMS Current of Diode 45Arms max.
(2)(3)Recommended Value 1.67N.m(17kgf.cm)
CHARACTERISTICS (Tc=25°C )
Item
Symbol Unit
Min. Typ. Max.
Test Conditions
Collector Emitter Cut-Off Current
I CES
mA
-
1.0 VCE=600V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage
VCE(sat)
V-
1.9
2.5 IC=150A,VGE=15V
Gate Emitter Threshold Voltage
VGE(TO)
V-
-
10
VCE=5V, IC =150mA
Input Capacitance
Cies
pF
-
7,400
-
VCE=10V,VGE=0V,f=1MHz
Rise Time
tr
-0.2
0.4 VCC=300V
Turn On Time
ton
-0.3
0.6 RL=2.0W
Fall Time
tf
-
0.25
0.35 RG=16W
(4)
Switching Times
Turn Off Time
toff
ms
-0.6
0.9 VGE=±15V
Peak Forward Voltage Drop
VFM
V-
2.2
3.0 IF=150A,VGE=0V
Reverse Recovery Time
trr
ms-
-
0.3 IF=150A,VGE=-10V, di/dt=200A/ms
IGBT
-
0.28
Thermal Impedance
FWD
Rth(j-c)
--
0.6
Junction to case
Notes:(4) RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
6
30
16
80
2-
φ5.6
3-M5
4-Fast-on
Terminal
#110
23
39.5
12
17
25
35
7
12
35
φ0.8
94
G1
E1
E2
G2
C2E1
E2
C1
Unit in mm
Weight: 200 (g)
TERMINALS
E1
C1
G1
E2
G2
C2E1