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參數(shù)資料
| 型號： | MB98A811Ax |
| 廠商： | Fujitsu Limited |
| 英文描述： | 2M Flash Eelectrically Erasable and Programmable (Flash) memory cards(2M電可擦除可編程閃速存儲器卡) |
| 中文描述： | 200萬閃光Eelectrically可擦除和可編程（閃存）記憶卡（200萬電可擦除可編程閃速存儲器卡） |
| 文件頁數(shù)： | 23/48頁 |
| 文件大?。?/td> | 353K |
| 代理商： | MB98A811AX |
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MB98A808Ax-20
MB98A809Ax-20
MB98A810Ax-20
MB98A811Ax-20
23
AC CHARACTERISTICS (Continued)
(At recommended operating conditions unless otherwise noted.)
MAIN MEMORY WRITE CYCLE TIMING DIAGRAM (WE = CONTROLLED)
*
1
PROGRAM
COMMAND
LATCH
ADDRESS
& DATA
PRO-
GRAM-
MING
PROGRAM
VERIFY
COMMAND
PROGRAM
VERIFY
SETUP
PROGRAM
COMMAND
DATA IN
= 40H
DATA IN
DATA IN
= C0H
: Undefined
WRITE CYCLE 2: CE1 = V
IH
:
8-bit Bus Organization
Notes: *1 A0, A18, A19 and A20 have to be fixed during programming command input because these addresses are chip
decoding addresses. Refer to the WRITE/ERASE CHIP DECODING INFORMATION.
*2 A0 = Either V
IL
or V
IH
.
t
WC
t
WC
t
AH
t
AS
t
RC
t
CS
t
CH
t
CH
t
CS
t
CS
t
CH
t
WPH
t
GHWL
t
WHWH1
t
WHGL
t
OHZ
t
WP
t
DH
t
DH
t
WP
t
CHZ
t
OE
t
DH
t
DS
t
DS
t
DS
t
OLZ
t
OH
High-Z
t
CLZ
t
CE
t
VPEL
VALID
DATA
WE
OE
CE2
V
IH
V
IL
Address
(A1 to A17)
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
D8 to D15
V
PPL
V
PP
Address*2
(A0, A18,
A19, A20)
12 V
V
IH
V
IL
t
WP
t
WC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MB98A809Ax | 512K Flash Eelectrically Erasable and Programmable (Flash) memory cards(512K電可擦除可編程閃速存儲器卡) |
| MB98A808A | Flash Erasable and Programmable Memory Card(2M電可擦可編程閃速存儲器) |
| MB98A811A | Flash Erasable and Programmable Memory Card(16M電可擦可編程閃速存儲器) |
| MB98A809A | Flash Erasable and Programmable Memory Card(4M電可擦可編程閃速存儲器) |
| MB98A810A | Flash Erasable and Programmable Memory Card(8M電可擦可編程閃速存儲器) |
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