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參數(shù)資料
| 型號： | MB98A811Ax |
| 廠商： | Fujitsu Limited |
| 英文描述： | 2M Flash Eelectrically Erasable and Programmable (Flash) memory cards(2M電可擦除可編程閃速存儲器卡) |
| 中文描述： | 200萬閃光Eelectrically可擦除和可編程（閃存）記憶卡（200萬電可擦除可編程閃速存儲器卡） |
| 文件頁數(shù)： | 18/48頁 |
| 文件大小： | 353K |
| 代理商： | MB98A811AX |
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MB98A808Ax-20
MB98A809Ax-20
MB98A810Ax-20
MB98A811Ax-20
18
AC CHARACTERISTICS (Continued)
(At recommended operating conditions unless otherwise noted.)
OE
CE1
ATTRIBUTE MEMORY READ CYCLE TIMING DIAGRAM (WE = V
IH
, REG = V
IL
) *
1
: Undefined
Notes:
CE2 = V
IH
:
8-bit Bus Organization
READ CYCLE 2:
PREVIOUS DATA VALID
DATA VALID
CE1 = OE = V
IL
, CE2 = V
IH
:
CE1 = CE2 = OE = V
IL
:
8-bit Bus Organization
16-bit Bus Organization
READ CYCLE 1:
Address
*
2
(A0 to A11)
D0 to D7
or
D0 to D15 *3
t
RAA
t
ROH
V
IH
V
IL
V
OH
V
OL
t
RRC
High-Z
DATA VALID
D0 to D7
Address
(A0 to A11)
t
RAA
t
ROE
V
IH
V
IL
V
OH
V
OL
t
RCE
V
IH
V
IL
V
IH
V
IL
t
ROHZ
t
RRC
t
RCLZ
t
ROLZ
t
RCHZ
*
1 This timing diagram is for MB98A808A3, 809A3, 810A3, and 811A3. “FF” data is available on MB98A808A2,
809A2, 810A2, and 811A2 only.
*
2 A0 = Either V
IH
or V
IL
during 16 bits bus organization.
*3 H-level is output from D8 to D15.
t
ROH
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| MB98A809Ax | 512K Flash Eelectrically Erasable and Programmable (Flash) memory cards(512K電可擦除可編程閃速存儲器卡) |
| MB98A808A | Flash Erasable and Programmable Memory Card(2M電可擦可編程閃速存儲器) |
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| MB98A809A | Flash Erasable and Programmable Memory Card(4M電可擦可編程閃速存儲器) |
| MB98A810A | Flash Erasable and Programmable Memory Card(8M電可擦可編程閃速存儲器) |
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