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參數(shù)資料
| 型號： | MB91F233APFF-GE1 |
| 廠商： | FUJITSU LTD |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 32-BIT, FLASH, 33.6 MHz, RISC MICROCONTROLLER, PQFP120 |
| 封裝： | PLASTIC, LQFP-120 |
| 文件頁數(shù)： | 58/68頁 |
| 文件大?。?/td> | 879K |
| 代理商： | MB91F233APFF-GE1 |
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MB91230 Series
61
6.
Electrical Characteristics for the D/A Converter
(VCC3IO
= AVCC = 3.0 V to 3.6 V, VSS = AVSS = 0.0 V, Ta = 0 °C to +85 °C)
* : The current consumption by D/A converter varies with input digital code.
The standard value indicates the current consumed when the digital code that maximizes the current consumption
is input.
7.
Flash Memory Write/Erase Characteristics
* : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at
+ 85 °C).
Parameter
Value
Unit
Remarks
Min
Typ
Max
Resolution
8bit
Nonlinear error
2.0
+2.0
LSB
When the output is unloaded
Differential linear error
1.0
+1.0
LSB
When the output is unloaded
Conversion speed
0.6
μs
When load capacitance
(CL) = 20 pF
3.0
μs
When load capacitance
(CL) = 100 pF
Output impedance
2.0
2.9
3.8
k
Ω
Analog current
40
μA
10
μs conversion, when the
output is unloaded
460*
μA
When the input digital code is
fixed at 7AH or 85H
0.1
μA
At power-down
Parameter
Conditions
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
Ta
= + 25 °C,
Vcc
= 5.0 V
115
s
Excludes 00H programming
prior erasure
Chip erase time
Ta
= + 25 °C,
Vcc
= 5.0 V
10
s
Excludes 00H programming
prior erasure
Byte write time
Ta
= + 25 °C,
Vcc
= 5.0 V
83,600
μs
Not including system-level
overhead time.
Chip write time
Ta
= + 25 °C,
Vcc
= 5.0 V
2.1
s
Not including system-level
overhead time.
Erase/write cycle
10,000
cycle
Flash data retention time Average Ta
= + 85 °C20
year
*
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