參數(shù)資料
型號： MB91267APMC
廠商： FUJITSU LTD
元件分類： 微控制器/微處理器
英文描述： 32-BIT, MROM, 33 MHz, RISC MICROCONTROLLER, PQFP64
封裝： 12 X 12 MM, 1.70 MM HEIGHT, 0.65 MM PITCH, PLASTIC, LFQFP-64
文件頁數(shù)： 35/56頁
文件大?。?/td> 473K
代理商： MB91267APMC
MB91265A Series
40
3.
DC Characteristics
(VCC
= 4.0 V to 5.5 V, VSS = AVSS = 0 V)
4.
Flash Memory Write/Erase Characteristics
* : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at + 85
°C) .
Parameter
Symbol
Pin Name
Conditions
Value
Unit Remarks
Min
Typ
Max
"H" level input
voltage
VIHS
Hysteresis
input pin
Vcc
× 0.8
Vcc
+ 0.3
V
"L" level input
voltage
VILS
Hysteresis
input pin
Vss
0.3
Vss
× 0.2
V
"H" level output
voltage
VOH
Other than
P30 to P35
VCC
= 5.0 V,
IOH
= 4.0 mA
Vcc
0.5
V
VOH2
P30 to P35
VCC
= 5.0 V,
IOH
= 8.0 mA
Vcc
0.7
V
"L" level output
voltage
VOL
Other than
P30 to P35
VCC
= 5.0 V,
IOL
= 4.0 mA
0.4
V
VOL2
P30 to P35
VCC
= 5.0 V,
IOL
= 12 mA
0.6
V
Input leak
current
ILI
VCC
= 5.0 V,
VSS < VI < VCC
5
+ 5
A
Pull-up
resistance
RPULL
INIT,
Pull-up pin
50
k
Power supply
current
ICC
VCC
= 5.0 V, 33 MHz
90
100
mA
ICCS
VCC
= 5.0 V, 33 MHz
60
80
mA
At SLEEP
ICCH
VCC
= 5.0 V,
Ta
= + 25 °C
300
A At STOP
Input
capacitance
CIN
Other than VCC,
VSS, AVCC, AVSS,
AVRH1, AVRH2
515
pF
Parameter
Conditions
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
(4 Kbytes sector)
Ta
= + 25 °C,
Vcc
= 5.0 V
0.2
0.5
s
Not including time for internal
writing before deletion.
Byte write time
Ta
= + 25 °C,
Vcc
= 5.0 V
32
3600
s
Not including system-level
overhead time.
Erase/write cycle
10000
cycle
Flash memory data
retention time
Average
Ta = + 85
°C
20
year
*
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