
MB90350E Series
79
7.
Dual Operation Flash Memory
Flash Memory Program/Erase Characteristics
* : Corresponding value comes from the technology reliability evaluation result.
(Using Arrhenius equation to translate high temperature measurements test result into normalized value at
+
85
°
C)
Parameter
Conditions
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
(4 Kbytes sector)
T
A
=
+
25
°
C
V
CC
=
5.0 V
0.2
0.5
s
Excludes programming
prior to erasure
Sector erase time
(16 Kbytes sector)
0.5
7.5
s
Excludes programming
prior to erasure
Chip erase time
4.6
s
Excludes programming
prior to erasure
Word (16-bit width)
programming time
64
3600
μ
s
Except for the overhead
time of the system level
Program/Erase cycle
10000
cycle
Flash memory Data
Retention Time
Average
T
A
=
+
85
°
C
20
year
*