
MB90925 Series
59
(Continued)
6.
Flash Memory Program/Erase Characteristics
* : This value comes from the technology qualification. (using Arrhenius equation to translate high temperature
measurements into normalized value at
+
85
°
C)
Parameter
Conditions
Value
Unit
Remarks
Min
Typ
Max
Chip erase time
T
A
=
+
25
°
C
V
CC
=
5.0 V
1
15
s
Excludes pre-programming before
erase
Byte (8-bit width)
programming time
32
3600
μ
s
Excludes system-level overhead
Erase/program cycle
10000
cycle
Flash memory data
retention time
Average
T
A
=
+
85
°
C
20
year
*
Non-Linear error
D
Differential linear error
(Measured
value)
(Measured value)
Actual conversion
value
Non-Linear error of
digital output N
Differential linear error
of digital output N
V
NT
{1 LSB
×
(N
1)
+
V
OT
}
1 LSB
V (
N
+
1
)
T
V
NT
1 LSB
V
FST
V
OT
1022
[LSB]
=
1 [LSB]
=
[V]
1 LSB
=
N
V
OT
: Voltage at transition of digital output from “000
H
” to “001
H
”
V
FST
: Voltage at transition of digital output from “3FE
H
” to “3FF
H
”
: A/D converter digital output value
Actual conversion
value
Ideal
characteristics
D
Analog input
Analog input
Actual conversion
value
{1 LSB x (N -1)
+ V
OT
}
Actual conversion
value
Ideal
characteristics
(Measured value)
AVss
AVRH
3FF
H
3FE
H
3FD
H
004
H
003
H
002
H
001
H
V
V
OT
(Measured value)
V
FST
(Measured
value)
AVss
AVRH
N + 1
H
N
H
N - 1
H
N - 2
H
V
(N + 1)T
V
NT