參數(shù)資料
型號: MB85R256PF
廠商: FUJI ELECTRIC HOLDINGS CO., LTD.
元件分類: F-RAM
英文描述: 4Kb FRAM Serial 3V Memory
中文描述: 4Kb的鐵電串行3V的記憶
文件頁數(shù): 1/12頁
文件大?。?/td> 153K
代理商: MB85R256PF
DS05-13101-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
256 K (32 K
×
8) Bit
MB85R256
I
DESCRIPTIONS
The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM MB85R256 is able to retain data without back-up battery.
The memory cells used for the MB85R256 has inproved at least 10
10
times of read/write access per bit, significantly
outperforming FLASH memory and EEPROM in durability.
The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
I
FEATURES
Bit configuration: 32,768 words x 8 bits
Read/write durability: 10
10
times/bit (Min)
Peripheral circuit CMOS construction
Operating power supply voltage: 3.0 V to 3.6 V
Operating temperature range:
40
°
C to
+
85
°
C
28-pin, SOP flat package
28-pin, TSOP(1) flat package
I
PACKAGES
28-pin plastic SOP
28-pin plastic TSOP(1)
(FPT-28P-M17)
(FPT-28P-M03)
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