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參數(shù)資料
| 型號(hào)： | MB85343C-70 |
| 廠(chǎng)商： | Fujitsu Limited |
| 英文描述： | CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM模塊) |
| 中文描述： | 的CMOS 100萬(wàn)× 32位的超頁(yè)模式內(nèi)存的CMOS（100萬(wàn)× 32位超級(jí)頁(yè)面存取模式動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 353K |
| 代理商： | MB85343C-70 |
1
DS05-11212-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 1M
HYPER PAGE MODE DRAM MODULE
×
32 BIT
MB85343C-60/-70
CMOS 1,048,576
×
32 Bit Hyper Page Mode DRAM Module
I
DESCRIPTION
The Fujitsu MB85343C is a fully decoded, CMOS dynamic random access memory (DRAM) module consisting
of eight MB814405C devices. The MB85343C is optimized for those applications requiring high speed, high
performance and large memory storage. The operation and electrical characteristics of the MB85343C are the
same as the MB814405C which features hyper page mode operation providing extended valid time for data
output and higher speed random access of upto 1,024
mode. For ease of memory expansion, the MB85343C is offered in a 72-pad Single In-line Memory Module
package (SIMM).
×
32bits of data within the same row than the fast page
I
ABSOLUTE MAXIMUM RATINGS (See NOTE.)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
Value
Unit
Supply Voltage
V
CC
–0.5 to +7.0
V
Input Voltage
V
IN
–0.5 to +7.0
V
Output Voltage
V
OUT
–0.5 to +7.0
V
Short Circuit Output Current
I
OUT
±
50
mA
Power Dissipation
P
D
8
W
Storage Temperature
T
STG
–55 to +125
°
C
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲(chǔ)器類(lèi)型:非易失 存儲(chǔ)器格式:RAM 技術(shù):ReRAM（電阻式 RAM） 存儲(chǔ)容量:4Mb （512K x 8） 時(shí)鐘頻率:5MHz 寫(xiě)周期時(shí)間 - 字，頁(yè):17ms 存儲(chǔ)器接口:SPI 電壓 - 電源:1.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類(lèi)型:表面貼裝 封裝/外殼:8-SOIC（0.209"，5.30mm 寬） 供應(yīng)商器件封裝:8-SOP 標(biāo)準(zhǔn)包裝:1 |
| MB85R1001 | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_08 | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
| MB85R1001A | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8) |
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