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參數(shù)資料
| 型號(hào)： | MB85342C-70 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 2M×32 BIT Hyper Page Mode DRAM Module(CMOS 2M×32位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM模塊) |
| 中文描述： | 的CMOS 200萬(wàn)× 32位的超頁(yè)模式內(nèi)存的CMOS（200萬(wàn)× 32位超級(jí)頁(yè)面存取模式動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 746K |
| 代理商： | MB85342C-70 |
1
DS05-11213-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS
2 M
FAST PAGE MODE DRAM MODULE
×
32 BITS
MB85342C-60/-70
CMOS 2,097,152
×
32 BITS Fast Page Mode DRAM Module
I
DESCRIPTION
The Fujitsu MB85342C is a fully decoded, CMOS Dynamic Random Access Memory (DRAM) module consisting
of sixteen MB814400C devices. The MB85342C is optimized for those applications requiring high speed, high
performance and large memory storage. The operation and electrical characteristics of the MB85342C are the
same as the MB814400C which features fast page mode operation. For ease of memory expansion, the
MB85342C is offered in a 72-pin Single In-line Memory Module package (SIMM).
I
PRODUCT LINE & FEATURES
Parameter
MB85342C-60
MB85342C-70
RAS Access Time
60 ns max.
70 ns max.
Random Cycle Time
110 ns min.
125 ns min.
Address Access Time
30 ns max.
35 ns max.
CAS Access Time
15 ns max.
20 ns max.
Fast Page Mode Cycle Time
40 ns min.
45 ns min.
Power Dissipation
Operating Mode
2772 mW max.
2464 mW max.
Standby Mode
176 mW max.
176 mW max.
Storage Temperature
88 mW max.
88 mW max.
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
Organization: 2,097,152 words
×
32 bits
Memory: MB814400C, 16 pcs
Decoupling Capacitor: 16 pcs
5.0 V
±
10% Supply Voltage
1,024 Refresh Cycles/16.4 ms
Fast page mode operation
Package and Ordering Information:
72-pin SIMM, order as
MB85342C-
××
PJPBK
(PJPBK = Gold Pad)
MB85342C-
××
PJPB
(PJPB = Solder Pad)
相關(guān)PDF資料 |
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| MB85343C-60 | CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM模塊) |
| MB85343C-70 | CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM模塊) |
| MB85344C-60 | CMOS 2M×32 BIT Hyper Page Mode DRAM Module(CMOS 2M×32超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM模塊) |
| MB85344C-70 | CMOS 2M×32 BIT Hyper Page Mode DRAM Module(CMOS 2M×32超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM模塊) |
| MB85391A-60 | CMOS 4M×32Bit Fast Page Mode DRAM Module S(CMOS 4M×32位 快速頁(yè)面存取模式動(dòng)態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:RAM 技術(shù):ReRAM（電阻式 RAM） 存儲(chǔ)容量:4Mb （512K x 8） 時(shí)鐘頻率:5MHz 寫周期時(shí)間 - 字，頁(yè):17ms 存儲(chǔ)器接口:SPI 電壓 - 電源:1.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.209"，5.30mm 寬） 供應(yīng)商器件封裝:8-SOP 標(biāo)準(zhǔn)包裝:1 |
| MB85R1001 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_08 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
| MB85R1001A | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8) |
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