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參數(shù)資料
| 型號： | MB85317A-60 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72位 同步動態(tài)RAM) |
| 中文描述： | 4米× 72Bit的CMOS同步動態(tài)隨機(jī)存取存儲器（SDRAM）的CMOS（4分× 72位同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 201K |
| 代理商： | MB85317A-60 |
1
DS05-11204-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 4M
FAST PAGE MODE DRAM MODULE
×
72 Bit
MB85317A-60/-70
CMOS 4M
×
72 Bit Fast Page Mode DRAM Module
I
DESCRIPTION
The Fujitsu MB85317A is a fully decoded, CMOS Dynamic Random Access Memory (DRAM) module consisting
of eighteen MB8116400A devices. The MB85317A is optimized for those applications requiring high speed, high
performance and large memory storage. The operation and electrical characteristics of the MB85317A are the
same as the MB8116400A which features fast page mode operation. For ease of memory expansion, the
MB85317A is offered in an 168-pad Dual In-line Memory Module package (DIMM).
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ABSOLUTE MAXIMUM RATINGS (See NOTE.)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
V
CC
V
V
OUT
I
OUT
P
T
STG
Value
Unit
V
V
V
mA
W
°
C
Supply Voltage
Input Voltage
Output Voltage
Short Circuit Output Current
Power Dissipation
Storage Temperature
–0.5 to +7.0
–0.5 to +7.0
–0.5 to +7.0
50
20
–55 to +125
IN
D
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:RAM 技術(shù):ReRAM（電阻式 RAM） 存儲容量:4Mb （512K x 8） 時鐘頻率:5MHz 寫周期時間 - 字，頁:17ms 存儲器接口:SPI 電壓 - 電源:1.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.209"，5.30mm 寬） 供應(yīng)商器件封裝:8-SOP 標(biāo)準(zhǔn)包裝:1 |
| MB85R1001 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_08 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
| MB85R1001A | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8) |
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