參數(shù)資料
型號: MB8504D064AA-60
廠商: Fujitsu Limited
英文描述: CMOS 4M×64 BIT Hyper Page Mode DRAM Module(CMOS 4M×64 位超級頁面存取模式動態(tài)RAM模塊)
中文描述: 的CMOS 4米× 64位超頁模式內(nèi)存的CMOS(4分× 64位超級頁面存取模式動態(tài)內(nèi)存模塊)
文件頁數(shù): 1/12頁
文件大?。?/td> 362K
代理商: MB8504D064AA-60
1
DS05-11217-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 4M
×
64
FAST PAGE MODE DRAM MODULE
MB8504D064AA-60/-70
CMOS 4M
×
64 Bit Fast Page Mode DRAM Module
I
DESCRIPTION
The Fujitsu MB8504D064AA is a fully decoded, CMOS Dynamic Random Access Memory (DRAM) module
consisting of sixteen MB8117400A devices. The MB8504D064AA is optimized for those applications requiring
high speed, high performance and large memory storage. The operation and electrical characteristics of the
MB8504D064AA are the same as the MB8117400A which features fast page mode operation. For ease of
memory expansion, the MB8504D064AA is offered in an 168-pad Dual In-line Memory Module package (DIMM).
I
ABSOLUTE MAXIMUM RATINGS (See NOTE)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
V
CC
V
V
OUT
I
OUT
P
T
STG
Value
Unit
V
V
V
mA
W
°
C
Supply Voltage
Input Voltage
Output Voltage
Short Circuit Output Current
Power Dissipation
Storage Temperature
–0.5 to +7.0
–0.5 to +7.0
–0.5 to +7.0
50
18
–55 to +125
IN
D
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
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