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參數(shù)資料
| 型號(hào)： | MB8502D064AA-70 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 2M×64 BIT Hyper Page Mode DRAM Module(CMOS 2M×64 位超級(jí)頁面存取模式動(dòng)態(tài)RAM模塊) |
| 中文描述： | 的CMOS 200萬× 64位超頁模式內(nèi)存的CMOS（200萬× 64位超級(jí)頁面存取模式動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 157K |
| 代理商： | MB8502D064AA-70 |
1
DS05-11220-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 2M
FAST PAGE MODE DRAM MODULE
×
64
MB8502D064AA-60/-70
CMOS 2M
×
64 Bit Fast Page Mode DRAM Module
I
DESCRIPTION
The Fujitsu MB8502D064AA is a fully decoded, CMOS Dynamic Random Access Memory (DRAM) module
consisting of eight MB8117800A devices. The MB8502D064AA is optimized for those applications requiring high
speed, high performance and large memory storage. The operation and electrical characteristics of the
MB8502D064AA are the same as the MB8117800A which features fast page mode operation. For ease of
memory expansion, the MB8502D064AA is offered in an 168-pad Dual In-line Memory Module package (DIMM).
I
ABSOLUTE MAXIMUM RATINGS (See NOTE)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
V
CC
V
V
OUT
I
OUT
P
T
STG
Value
–0.5 to +7.0
–0.5 to +7.0
–0.5 to +7.0
50
10
–55 to +125
Unit
V
V
V
mA
W
°
C
Supply Voltage
Input Voltage
Output Voltage
Short Circuit Output Current
Power Dissipation
Storage Temperature
IN
D
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
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