參數(shù)資料
型號: MB84VD22184EG-90-PBS
廠商: FUJITSU LTD
元件分類: 存儲器
英文描述: 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA71
封裝: PLASTIC, FBGA-71
文件頁數(shù): 34/61頁
文件大?。?/td> 1589K
代理商: MB84VD22184EG-90-PBS
MB84VD2218XEC/EE/2219XEC/EE
-90
34
(Continued)
* : V
CC
indicates lower of V
CC
f or V
CC
s
Notes:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. Applicable for only V
CC
f applying.
5. Embedded Alogorithm (program or erase) is in progress. (@5 MHz)
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Typ.
Max.
Unit
V
IL
Input Low Level
–0.3
0.5
V
V
IH
Input High Level
2.4
V
CC
+0.3*
V
V
ID
Voltage for Sector
Protection, and Temporary
Sector Unprotection
(RESET) (Note 4)
11.5
12.5
V
V
ACC
Voltage for Program
Acceleration (WP/ACC)
(Note4)
8.5
9.0
9.5
V
V
OL
Output Low Voltage Level
V
CC
f = V
CC
f Min.,V
CC
s = V
CC
s Min.,
I
OL
=1.0 mA
0.4
V
V
OH
Output High Voltage Level
V
CC
f = V
CC
f Min.,V
CC
s = V
CC
s Min.,
I
OH
=-0.5 mA
2.4
V
V
LKO
Flash Low V
CC
f Lock-Out
Voltage
2.3
2.5
V
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