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參數(shù)資料
| 型號(hào)： | MB84VD21181 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM |
| 中文描述： | 1,600（× 8 / × 16）閃存 |
| 文件頁(yè)數(shù)： | 26/55頁(yè) |
| 文件大?。?/td> | 907K |
| 代理商： | MB84VD21181 |
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MB84VD2118XA
-85
/MB84VD2119XA
-85
26
I
ELECTRICAL CHARACTERISTICS
1.
DC Characteristics
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Typ.
Max.
Unit
I
LI
Input Leakage Current
V
IN
=
V
SS
to V
CC
f, V
CC
s
V
OUT
=
V
SS
to V
CC
f, V
CC
s
V
CC
f
=
V
CC
f Max, V
CC
s
=
V
CC
s Max,
RESET
=
12.5V
V
CC
f
=
V
CC
f Max, V
CC
s
=
V
CC
s Max,
WP/ACC
=
V
ACC
Max
1.0
1.0
+
1.0
+
1.0
μ
A
μ
A
I
LO
Output Leakage Current
I
LIT
RESET Inputs Leakage
Current
35
μ
A
I
LIA
ACC Input Leakage
Current
20
mA
I
CC1
f
Flash V
CC
Active Current
(Read)
(Note 1)
CEf
=
V
IL
,
OE
=
V
IH
t
CYCLE
=
5 MHz Byte
t
CYCLE
=
5 MHz Word
t
CYCLE
=
1 MHz Byte
t
CYCLE
=
1 MHz Word
13
mA
15
7
mA
7
I
CC2
f
Flash V
CC
Active Current
(Program/Erase)
(Note 2)
CEf
=
V
IL
, OE
=
V
IH
35
mA
I
CC3
f
Flash V
CC
Active Current
(Read-While-Program)
(Note 5)
CEf
=
V
IL
, OE
=
V
IH
Byte
48
mA
Word
50
I
CC4
f
Flash V
CC
Active Current
(Read-While-Erase)
(Note 5)
CEf
=
V
IL
, OE
=
V
IH
Byte
48
mA
Word
50
I
CC5
f
Flash V
CC
Active Current
(Erase-Suspend-Pro-
gram)
CEf
=
V
IL
, OE
=
V
IH
35
mA
I
CC1
s
SRAM V
CC
Active Current
V
CC
s
=
V
CC
Max.,
CE1s
=
V
IL
,
CE2s
=
V
IH
CE1s
=
0.2 V,
CE2s
=
V
CC
s
0.2 V,
V
CC
f
=
V
CC
Max., CEf
=
V
CC
f
±
0.3 V
RESET
=
V
CC
f
±
0.3 V,
WP/ACC
=
V
CC
f
±
0.3 V
V
CC
f
=
V
CC
Max., RESET
=
V
SS
±
0.3 V
WP/ACC
=
V
CC
f
±
0.3 V
V
CC
f
=
V
CC
Max., CEf
=
V
SS
±
0.3 V
RESET
=
V
CC
f
±
0.3 V,
WP/ACC
=
V
CC
f
±
0.3 V
V
IN
=
V
CC
f
±
0.3 V or V
SS
±
0.3 V
CE1s
≥
V
CC
s
0.2V,
CE2s
≥
V
CC
s
0.2V
t
CYCLE
=
10 MHz
40
mA
I
CC2
s
SRAM V
CC
Active Current
t
CYCLE
=
10 MHz
40
mA
t
CYCLE
=
1 MHz
8
mA
I
SB1
f
Flash V
CC
Standby Cur-
rent
1
5
μ
A
I
SB2
f
Flash V
CC
Standby Cur-
rent (RESET)
1
5
μ
A
I
SB3
f
Flash V
CC
Current
(Automatic Sleep Mode)
(Note 3)
1
5
μ
A
I
SB1
s
SRAM V
CC
Standby
Current
0.2
7
μ
A
I
SB2
s
SRAM V
CC
Standby
Current
CE2s
≤
0.2V
0.2
7
μ
A
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| MB84VD21181-85-PTS | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM |
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| MB84VD21182-85-PBS | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM |
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