參數(shù)資料
型號(hào)： MB84VD21083
廠商： Fujitsu Limited
英文描述： 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
中文描述： 1,600（x8/x16）閃存
文件頁數(shù)： 51/55頁
文件大小： 850K
代理商： MB84VD21083
MB84VD2108X
-85
/MB84VD2109X
-85
51
CE2s Controlled Data Retention Mode (Note 3)
Notes : 1.In CE1s controlled data retention mode, input level of CE2s should be fixed Vccs to Vccs
0.2 V or Vss
to 0.2 V during data retention mode. Other input and input/output pins can be used between
0.3 V and
Vccs
+
0.3 V.
2.When CE1s is operating at the V
IH
min. level (2.2 V) , the standby current is given by I
SB1
s during the
transition of V
CC
s from 3.6 to 2.2 V.
3.In CE2s controlled data retention mode, input and input/output pins can be used between
0.3 V and
Vccs
+
0.3 V.
I
PIN CAPACITANCE
Note : Test conditions T
A
=
25
°
C, f
=
1.0 MHz
I
HANDLING OF PACKAGE
Please handle this package carefully since the sides of packages are right angle.
I
CAUTION
1. The high voltage (V
ID
) can not apply to address pins and control pins except RESET. Therefore, it can not
use autoselect and sector protect function by applying the high voltage (V
ID
) to specific pins.
2. For the sector protection, since the high voltage (V
ID
) can be applied to the RESET, it can be protected the
sector using “Extended sector protect” command.
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
=
0
V
OUT
=
0
V
IN
=
0
V
IN
=
0
11
14
pF
C
OUT
Output Capacitance
12
16
pF
C
IN2
Control Pin Capacitance
14
16
pF
C
IN3
WP/ACC Pin Capacitance
17
20
pF
0.2 V
DATA RETENTION MODE
V
CC
s
CE2s
V
DH
V
IH
V
IL
t
CDR
t
R
GND
2.7 V
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