參數(shù)資料
型號: MB84VD21083
廠商: Fujitsu Limited
英文描述: 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
中文描述: 1,600(x8/x16)閃存
文件頁數(shù): 32/55頁
文件大?。?/td> 850K
代理商: MB84VD21083
MB84VD2108X
-85
/MB84VD2109X
-85
32
(Continued)
Parameter Symbols
Notes : 1.This does not include the preprogramming time.
2.This timing is for Sector Protection Operation.
3.The time between writes must be less than “t
TOW
” otherwise that command will not be accepted and erasure
will start. A time-out or “t
TOW
” from the rising edge of last CEf or WE whichever happens first will initiate the
execution of the Sector Erase command (s) .
4.When the Erase Suspend command is written during the Sector Erase operation, the device will take a
maximum of “t
SPD
” to suspend the erase operation.
Description
-85
Unit
JEDEC
Standard
Min.
Typ.
Max.
85
90
20
t
VCS
V
CC
f Setup Time
50
μ
s
μ
s
ns
t
VLHT
Voltage Transition Time (Note 2)
4
t
VIDR
Rise Time to V
ID
(Note 2)
500
t
VACCR
Rise Time to V
ACC
500
ns
t
RB
Recover Time from RY/BY
0
ns
t
RP
RESET Pulse Width
500
200
50
ns
t
EOE
Delay Time from Embedded Output Enable
ns
t
RH
RESET High Level Period Before Read
ns
t
BUSY
Program/Erase Valid to RY/BY Delay
ns
μ
s
μ
s
t
TOW
Erase Time-out Time (Note 3)
t
SPD
Erase Suspend Transition Time (Note 4)
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