參數(shù)資料
型號(hào): MB84VD21081
廠商: Fujitsu Limited
英文描述: 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
中文描述: 1,600(x8/x16)閃存
文件頁數(shù): 31/55頁
文件大?。?/td> 850K
代理商: MB84VD21081
MB84VD2108X
-85
/MB84VD2109X
-85
31
Erase/Program Operations (Flash)
Parameter Symbols
(Continued)
Description
-85
Unit
JEDEC
Standard
Min.
Typ.
Max.
t
AVAV
t
WC
Write Cycle Time
85
ns
t
AVWL
t
WLAX
t
AS
Address Setup Time (WE to Addr.)
0
ns
t
ASO
Address Setup Time to CEf Low During Toggle Bit Polling
15
ns
t
AH
Address Hold Time (WE to Addr.)
45
ns
t
AHT
Address Hold Time from CEf or OE High During Toggle
Bit Polling
0
ns
t
DVWH
t
DS
Data Setup Time
35
8
ns
t
WHDX
t
DH
Data Hold Time
0
ns
t
OES
Output Enable Setup Time
0
ns
t
OEH
Output Enable Hold Time
Read
0
ns
Toggle and Data Polling
10
ns
t
GHEL
t
CEPH
CEf High During Toggle Bit Polling
20
ns
t
OEPH
OE High During Toggle Bit Polling
20
ns
t
GHEL
Read Recover Time Before Write (OE to CEf)
0
ns
t
GHWL
t
GHWL
Read Recover Time Before Write (OE to WE)
0
ns
t
WLEL
t
WS
WE Setup Time (CEf to WE)
0
ns
t
ELWL
t
CS
CEf Setup Time (WE to CEf)
0
ns
t
EHWH
t
WH
WE Hold Time (CEf to WE)
0
ns
t
WHEH
t
CH
CEf Hold Time (WE to CEf)
0
ns
t
WLWH
t
WP
Write Pulse Width
35
ns
t
ELEH
t
CP
CEf Pulse Width
35
ns
t
WHWL
t
WPH
Write Pulse Width High
30
ns
t
EHEL
t
CPH
CEf Pulse Width High
30
ns
μ
s
μ
s
s
t
WHWH1
t
WHWH1
Byte Programming Operation
Word Programming Operation
16
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 1)
1
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MB84VD21081-85-PBS 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
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