參數(shù)資料
型號(hào): MB84VD21081
廠商: Fujitsu Limited
英文描述: 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
中文描述: 1,600(x8/x16)閃存
文件頁(yè)數(shù): 27/55頁(yè)
文件大小: 850K
代理商: MB84VD21081
MB84VD2108X
-85
/MB84VD2109X
-85
27
(Continued)
*: V
CC
indicates lower of V
CC
f or V
CC
s
Notes : 1. The I
CC
current listed includes both the DC operating current and the frequency dependent component.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. Applicable for only V
CC
f applying.
5. Embedded Algorithm (program or erase) is in progress. (@5 MHz)
Parameter
Symbol
V
IL
Parameter Description
Test Conditions
Min.
Typ.
Max.
Unit
Input Low Level
0.3
2.4
0.5
V
V
IH
Input High Level
V
CC
+
0.3*
V
V
ID
Voltage for Sector
Protection, and Temporary
Sector Unprotection
(RESET) (Note 4)
11.5
12.5
V
V
ACC
Voltage for Program
Acceleration (WP/ACC)
(Note4)
8.5
9.0
9.5
V
V
OL
Output Low Voltage Level
V
CC
f
=
V
CC
f Min., V
CC
s
=
V
CC
s Min.,
I
OL
=
1.0 mA
V
CC
f
=
V
CC
f Min., V
CC
s
=
V
CC
s Min.,
I
OH
=
0.5 mA
0.4
V
V
OH
Output High Voltage Level
2.4
V
V
LKO
Flash Low V
CC
f Lock-Out
Voltage
2.3
2.5
V
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