參數(shù)資料
型號(hào): MB84VD2008-10
廠商: FUJITSU LTD
元件分類: 存儲(chǔ)器
英文描述: 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA48
封裝: PLASTIC, BGA-48
文件頁(yè)數(shù): 26/30頁(yè)
文件大小: 393K
代理商: MB84VD2008-10
26
MB84VD2008
-10
/MB84VD2009
-10
Write Cycle (Note 4) (UB, LB Control) (SRAM)
t
WC
t
AS
t
WP
t
WR
t
ODW
t
DS
t
DH
VALID DATA IN
ADDRESSES
WE
CEs
D
OUT
D
IN
UB, LB
Notes:
2. If CEs goes LOW coincident with or after WE goes LOW, the output will remain at high
impedance.
3. If CEs goes HIGH coincident with or before WE goes HIGH, the output will remain at
high impedance.
4. If OE is HIGH during the write cycle, the outputs will remain at high impedance.
5. Because I/O signals may be in the output state at this Time, input signals of reverse
polarity must not be applied.
Note 5
Note 5
t
CW
t
BE
t
BW
t
COE
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