參數(shù)資料
型號(hào): MB84VD2008-10
廠商: FUJITSU LTD
元件分類: 存儲(chǔ)器
英文描述: 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA48
封裝: PLASTIC, BGA-48
文件頁數(shù): 16/30頁
文件大?。?/td> 393K
代理商: MB84VD2008-10
16
MB84VD2008
-10
/MB84VD2009
-10
Write Cycle (CEf control) (Flash)
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence
6. These waveforms are for the x16 mode. The addresses differ from x8 mode.
t
CP
t
DS
t
WHWH1
t
WC
t
AH
WE
OE
DQ
t
AS
t
CPH
t
DH
DQ
7
A0H
D
OUT
CEf
555H
PA
PA
Data Polling
3rd Bus Cycle
t
WS
t
WH
t
GHEL
PD
ADDRESSES
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