參數(shù)資料
型號(hào): MB81F643242C-60
廠(chǎng)商: Fujitsu Limited
英文描述: 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM
中文描述: 4 × 512 kX的32位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù): 43/56頁(yè)
文件大小: 1001K
代理商: MB81F643242C-60
43
MB81F643242C-60/-70/-10
Advanced Info (AE0.1E)
TIMING DIAGRAM – 15 : AUTO-REFRESH TIMING
t
RC
(min)
t
RC
(min)
CLK
Command
BA
0
, BA
1
REF
Command
NOP
BA
*1
NOP
NOP
REF
NOP
*4
DON’T CARE
Notes:
*1. All banks should be precharged prior to the first Auto-refresh command (REF).
*2. Bank select is ignored at REF command. The refresh address and bank select are selected by internal refresh counter.
*3. Either NOP or DESL command should be asserted during t
RC
period while Auto-refresh mode.
*4. Any activation command such as ACTV or MRS command other than REF command should be asserted after t
RC
from the
last REF command.
*3
DON’T CARE
*3
*3
*3
*2
*2
TIMING DIAGRAM – 16 : SELF-REFRESH ENTRY AND EXIT TIMING
t
RC
(min)
t
CKSP
(min)
CLK
CKE
Command
NOP
Notes:
*1. Precharge command (PRE or PALL) should be asserted if any bank is active prior to Self-refresh Entry command (SELF).
*2. The Self-refresh Exit command (SELFX) is latched after t
CKSP
(min). It is recommended to apply NOP command in
conjunction with CKE.
*3. Either NOP or DESL command can be used during t
RC
period.
*4. CKE should be held high within one t
RC
period after t
CKSP
.
SELF
DON’T CARE
SELFX
Command
NOP
*2
NOP
*3
*1
t
SI
(min)
*4
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