參數(shù)資料
型號： MB81164442A-67
廠商： Fujitsu Limited
英文描述： CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動態(tài)RAM)
中文描述： 的CMOS 4 × 4米× 16位同步動態(tài)隨機存取存儲器（SDRAM）（的CMOS 4 × 4米× 16位同步動態(tài)RAM）的
文件頁數(shù)： 18/46頁
文件大?。?/td> 642K
代理商： MB81164442A-67
18
MB81164442A-125/-100/-84/-67/-125L/-100L/-84L/-67L
When the full burst operation is executed at single write mode, Auto-precharge command is valid only at write
operation.
The burst type can be selected either sequential or interleave mode. But only the sequential mode is usable to the
full column burst. The sequential mode is an incremental decoding scheme within a boundary address to be
determined by burst length, it assigns +1 to the previous (or initial) address until reaching the end of boundary
address and then wraps round to least significant address (= 0).
FULL COLUMN BURST AND BURST STOP COMMAND (BST)
The full column burst is an option of burst length and available only at sequential mode of burst type. This full column
burst mode is repeatedly access to the same column. If burst mode reaches end of column address, then it wraps
round to first column address (= 0) and continues to count until interrupted by the news read (READ) /write (WRIT),
precharge (PRE), or burst stop (BST) command. The selection of Auto-precharge option is illegal during the full
column burst operation except write command at BURST READ & SINGLE WRITE mode.
The BST command is applicable to terminate the burst operation. If the BST command is asserted during the burst
mode, its operation is terminated immediately and the internal state moves to Bank Active.
When read mode is interrupted by BST command, the output will be in High-Z.
For the detail rule, please refer to Timing Diagram-8.
When write mode is interrupted by BST command, the data to be applied at the same time with BST command will
be ignored.
BURST READ & SINGLE WRITE
The burst read and single write mode provides single word write operation regardless of its burst length. In this
mode, burst read operation does not be affected by this mode.
Burst
Length
Starting Column
Address
A
2
A
1
A
0
Sequential Mode
Interleave
2
X X 0
0 – 1
0 – 1
X X 1
1 – 0
1 – 0
4
X 0 0
0 – 1 – 2 – 3
0 – 1 – 2 – 3
X 0 1
1 – 2 – 3 – 0
1 – 0 – 3 – 2
X 1 0
2 – 3 – 0 – 1
2 – 3 – 0 – 1
X 1 1
3 – 0 – 1 – 2
3 – 2 – 1 – 0
8
0 0 0
0 – 1 – 2 – 3 – 4 – 5 – 6 – 7
0 – 1 – 2 – 3 – 4 – 5 – 6 – 7
0 0 1
1 – 2 – 3 – 4 – 5 – 6 – 7 – 0
1 – 0 – 3 – 2 – 5 – 4 – 7 – 6
0 1 0
2 – 3 – 4 – 5 – 6 – 7 – 0 – 1
2 – 3 – 0 – 1 – 6 – 7 – 4 – 5
0 1 1
3 – 4 – 5 – 6 – 7 – 0 – 1 – 2
3 – 2 – 1 – 0 – 7 – 6 – 5 – 4
1 0 0
4 – 5 – 6 – 7 – 0 – 1 – 2 – 3
4 – 5 – 6 – 7 – 0 – 1 – 2 – 3
1 0 1
5 – 6 – 7 – 0 – 1 – 2 – 3 – 4
5 – 4 – 7 – 6 – 1 – 0 – 3 – 2
1 1 0
6 – 7 – 0 – 1 – 2 – 3 – 4 – 5
6 – 7 – 4 – 5 – 2 – 3 – 0 – 1
1 1 1
7 – 0 – 1 – 2 – 3 – 4 – 5 – 6
7 – 6 – 5 – 4 – 3 – 2 – 1 – 0
相關(guān)PDF資料
PDF描述
MB81164442A-67L CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動態(tài)RAM)
MB81164442A-84 CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動態(tài)RAM)
MB81164442A-84L CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動態(tài)RAM)
MB8117400A-50 CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4位快速頁面存取模式動態(tài)RAM)
MB8117400A-60 CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4位快速頁面存取模式動態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB8116E 制造商:FUJITSU 功能描述: 制造商:FUJITSU 功能描述:8116E
MB8117800A-60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM
MB8117800A-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM
MB812 功能描述:ACCY MOUNT BMM 3/4 58A RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:*
MB812.833 功能描述:ACCY MOUNT BMM 3/4 58A RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:*
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*