參數(shù)資料
型號(hào): MAX6870ETJ-T
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 電源管理
英文描述: EEPROM-Programmable Hex/Quad Power-Supply Sequencers/Supervisors with ADC
中文描述: 6-CHANNEL POWER SUPPLY MANAGEMENT CKT, QCC32
封裝: 7 X 7 MM, 0.80 MM HEIGHT, MO-220, TQFN-32
文件頁數(shù): 25/51頁
文件大?。?/td> 672K
代理商: MAX6870ETJ-T
Table 21 only applies to PO8 of the MAX6870. Write a 0
to a bit to make the PO8 output independent of the
respective signal (IN1–IN6 primary or secondary
thresholds, WDI1 or WDI2, GPI1–GPI4, MR, or other
programmable outputs).
Output Stage Configurations
Independently program each programmable output as
active-high or active-low (Table 22). Additionally, pro-
gram each programmable output as weak pullup, push-
pull, open-drain, or charge pump (Tables 23 and 24).
Every programmable output can be configured as
open-drain or weak pullup; however, only PO1–PO4
(MAX6870) or PO1/PO2 (MAX6871) can be configured
as charge-pump outputs, and only PO5–PO8
(MAX6870) or PO3/PO4/PO5 (MAX6871) can be config-
ured as push-pull outputs. Finally, set the PO_ timeout
period for each programmable output (Table 25).
An internal 10k
resistor provides the pullup resistance
for outputs configured as weak pullup stages. Program
each weak pullup output stage to refer to ABP or one of
the IN3–IN6 inputs. The programmable outputs source up
to 10mA and sink up to 4mA when configured as push-
pull stages. Program each push-pull output stage to ref-
erence to one of IN3–IN6. PO1–PO4 (MAX6870)/
PO1/P02 (MAX6871) pull to VABP + 5V when configured
as charge-pump outputs.
MAX6870/MAX6871
EEPROM-Programmable Hex/Quad
Power-Supply Sequencers/Supervisors with ADC
______________________________________________________________________________________
31
Table 21. PO8 (MAX6870 only) Output Dependency
REGISTER
ADDRESS
EEPROM
MEMORY
ADDRESS
BIT
OUTPUT ASSERTION CONDITIONS
[0]
1 = PO8 assertion depends on IN1 primary undervoltage threshold (Table 2).
[1]
1 = PO8 assertion depends on IN2 primary undervoltage threshold (Table 3).
[2]
1 = PO8 assertion depends on IN3 primary undervoltage threshold (Table 4).
[3]
1 = PO8 assertion depends on IN4 primary undervoltage threshold (Table 4).
[4]
1 = PO8 assertion depends on IN5 primary undervoltage threshold (Table 4).
[5]
1 = PO8 assertion depends on IN6 primary undervoltage threshold (Table 4).
[6]
1 = PO8 assertion depends on watchdog 1 (Tables 27 and 28).
36h
8036h
[7]
1 = PO8 assertion depends on watchdog 2 (Tables 27 and 28).
[0]
1 = PO8 assertion depends on IN1 secondary undervoltage/overvoltage threshold (Table 2).
[1]
1 = PO8 assertion depends on IN2 secondary undervoltage/overvoltage threshold (Table 3).
[2]
1 = PO8 assertion depends on IN3 secondary undervoltage/overvoltage threshold (Table 4).
[3]
1 = PO8 assertion depends on IN4 secondary undervoltage/overvoltage threshold (Table 4).
[4]
1 = PO8 assertion depends on IN5 secondary undervoltage/overvoltage threshold (Table 4).
[5]
1 = PO8 assertion depends on IN6 secondary undervoltage/overvoltage threshold (Table 4).
[6]
1 = PO8 assertion depends on GPI1 (Table 6).
37h
8037h
[7]
1 = PO8 assertion depends on GPI2 (Table 6).
[0]
1 = PO8 assertion depends on GPI3 (Table 6).
[1]
1 = PO8 assertion depends on GPI4 (Table 6).
[2]
1 = PO8 assertion depends on PO1 (Table 10).
[3]
1 = PO8 assertion depends on PO2 (Table 11).
[4]
1 = PO8 assertion depends on PO3 (Tables 12 and 13).
[5]
1 = PO8 assertion depends on PO4 (Tables 14 and 15).
[6]
1 = PO8 assertion depends on PO5 (Tables 16 and 17).
38h
8038h
[7]
1 = PO8 assertion depends on PO6 (Tables 18 and 19).
39h
8039h
[0]
1 = PO8 assertion depends on PO7 (Table 20).
40h
8040h
[7]
1 = PO8 asserts when MR = low (Table 7).
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