參數(shù)資料
型號: MAX5909EEE+
廠商: Maxim Integrated
文件頁數(shù): 2/24頁
文件大?。?/td> 633K
描述: IC HOT-SWAP CTRLR DUAL 16QSOP
產(chǎn)品培訓模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標準包裝: 100
類型: 熱交換控制器
應用: 通用型,PCI Express?
內(nèi)部開關:
電源電壓: 1 V ~ 13.2 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-SSOP(0.154",3.90mm 寬)
供應商設備封裝: 16-QSOP
包裝: 管件
Low-Voltage, Dual Hot-Swap Controllers/Power
Sequencers
2  _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
IN
_ = +1V to +13.2V provided at least one supply is higher than +2.7V, V
ON
= +2.7V, T
A
= 0癈 to +85癈, unless otherwise noted.
Typical values are at V
IN1
= +5V, V
IN2
= +3.3V, and T
A
= +25癈.) (Note 1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
IN_ to GND...........................................................................+14V
GATE_ to GND..........................................+0.3V to (V
IN
_ + 6.2V)
ON, PGOOD, COMP+, COMPOUT, TIM
to GND.....-0.3V to the higher of (V
IN1
+ 0.3V) and (V
IN2
+ 0.3V)
SENSE_, MON_, LIM_ to GND...................-0.3V to (V
IN
_ + 0.3V)
Current into Any Pin .........................................................?0mA
Continuous Power Dissipation (T
A
= +70癈)
8-Pin Narrow SO (derate 5.9mW/癈 above +70癈)......471mW
16-Pin QSOP (derate 8.3mW/癈 above +70癈)............667mW
Operating Temperature Ranges:
MAX590_U_ _ .....................................................0癈 to +85癈
MAX590_E_ _ ...................................................-40癈 to +85癈
Storage Temperature Range.............................-65癈 to +150癈
Lead Temperature (soldering, 10s).................................+300癈
PARAMETER
YMB  L
CONDITIONS
MIN
TYP
MAX
NIT
POWER SUPPLIES
IN  In
V  l
R  n
N
2
V
IN
_
Other V
IN
 = +2.7V
1.0
13.2
V
Supply Current
I
IN
I
IN1
 + I
IN2
1.2
2.9
mA
CURRENT CONTROL
T
A
 = +25癈
  22.5
25
27.5
MAX5904/MAX5905
T
A
 = 0癈 to +85癈
20.5
27.5
LIM = GND
22.5
25
27.5
Slow-Comparator Threshold
(V
IN
 - V
SENSE
) (Note 3)
V
SC TH
MAX5906MAX5909
R
LIM
 = 300k&
80
100
125
mV
1mV overdrive
3
ms
Slow-Comparator Response Time
(Note 4)
t
SCD
50mV overdrive
110
V
SU TH
V
IN
_ - V
SENSE
_; during startup
2 x V
SC, TH
Fast-Comparator Threshold
V
FC TH
V
IN
_ - V
SENSE
_; normal operation
4 x V
SC, TH
mV
F    -    m   r    r R
n    Tim
t
FCD
10mV overdrive, from overload condition
260
ns
SENSE Input Bias Current
I
B SEN
V
SEN
_ = V
IN
_
0.03
6
MOSFET DRIVER
R
TIM
 = 100k&
7.1
10.8
15.5
R
TIM
 = 4k& (minimum value)
0.31
0.45
0.58
Startup Period
(Note 5)
t
START
TIM floating for MAX5906MAX5909
fixed for MAX5904/MAX5905
3.9
9
16.0
ms
Charging, V
GATE
 = +5V, V
IN
 = +10V
(Note 5)
80
100
130
Weak discharge, during startup when current
limit is active or when 0.4V < V
ON
< 0.8V
100
Average Gate Current
I
GATE
Strong discharge, triggered by a fault or
when V
ON
 < 0.4V
3
mA
V
GATE
_ - V
IN
_, I
GATE
_ < 1礎, V
IN
 e 3V
4.8
5.4
5.8
Gate-Drive Voltage
V
DRIVE
V
GATE
_ - V
IN
_, I
GATE
_ < 1礎, 2.7V d V
IN
 d 3V
4.2
5.3
5.8
V
ON COMPARATOR
Low to high
0.375
0.4
0.425
V
Fast Pulldown ON Threshold
V
ONFP TH
H steresis
25
mV
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