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參數(shù)資料
| 型號(hào)： | MAX5886EGK+TD |
| 廠商： | Maxim Integrated Products |
| 文件頁(yè)數(shù)： | 11/18頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC DAC 12BIT 3.3V 500MSPS 68-QFN |
| 產(chǎn)品培訓(xùn)模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 設(shè)置時(shí)間： | 11ns |
| 位數(shù)： | 12 |
| 數(shù)據(jù)接口： | 并聯(lián) |
| 轉(zhuǎn)換器數(shù)目： | 1 |
| 電壓電源： | 模擬和數(shù)字 |
| 功率耗散（最大）： | 130mW |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 68-VFQFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 68-QFN 裸露焊盤（10x10） |
| 包裝： | 帶卷 (TR) |
| 輸出數(shù)目和類型： | 2 電流，單極 |
| 采樣率（每秒）： | 500M |
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MAX5886
3.3V, 12-Bit, 500Msps High Dynamic
Performance DAC with Differential LVDS Inputs
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(AVDD = DVDD = VCLK = 3.3V, AGND = DGND = CLKGND = 0, external reference, VREFIO = 1.25V, differential transformer-coupled
analog output, 50
double terminated (Figure 7), IOUT = 20mA, TA = TMIN to TMAX, unless otherwise noted. ≥+25°C guaranteed by
production test, <+25°C guaranteed by design and characterization. Typical values are at TA = +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
AVDD, DVDD, VCLK to AGND................................-0.3V to +3.9V
AVDD, DVDD, VCLK to DGND ...............................-0.3V to +3.9V
AVDD, DVDD, VCLK to CLKGND ...........................-0.3V to +3.9V
AGND, CLKGND to DGND....................................-0.3V to +0.3V
DACREF, REFIO, FSADJ to AGND.............-0.3V to AVDD + 0.3V
IOUTP, IOUTN to AGND................................-1V to AVDD + 0.3V
CLKP, CLKN to CLKGND...........................-0.3V to VCLK + 0.3V
B0P/B0N–B11P/B11N, SEL0,
PD to DGND ...........................................-0.3V to DVDD + 0.3V
Continuous Power Dissipation (TA = +70°C)
68-Pin QFN-EP (derate 41.7mW/°C above +70°C) ......3333mW
Thermal Resistance (
θJA) ..............................................+24°C/W
Operating Temperature Range ..........................-40°C to +85°C
Junction Temperature .....................................................+150°C
Storage Temperature Range ............................-60°C to +150°C
Lead Temperature (soldering, 10s) ................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
STATIC PERFORMANCE
Resolution
12
Bits
Integral Nonlinearity
INL
Measured differentially
±0.2
LSB
Differential Nonlinearity
DNL
Measured differentially
±0.15
LSB
Offset Error
OS
-0.025
±0.01
+0.025
%FS
Offset Drift
±50
ppm/
°C
Full-Scale Gain Error
GEFS
External reference, TA
≥ +25°C
-3.5
+1.5
%FS
Internal reference
±100
Gain Drift
External reference
±50
ppm/
°C
Full-Scale Output Current
IOUT
(Note 1)
2
20
mA
Min Output Voltage
Single ended
-0.5
V
Max Output Voltage
Single ended
1.1
V
Output Resistance
ROUT
1M
Output Capacitance
COUT
5pF
DYNAMIC PERFORMANCE
Output Update Rate
fCLK
1
500
Msps
fCLK = 100MHz
fOUT = 16MHz, -12dB FS
-151
Noise Spectral Density
fCLK = 200MHz
fOUT = 80MHz, -12dB FS
-154
dB FS/
Hz
fOUT = 1MHz, 0dB FS
88
fOUT = 1MHz, -6dB FS
86
Spurious-Free Dynamic Range to
Nyquist
SFDR
fCLK = 100MHz
fOUT = 1MHz, -12dB FS
80
dBc
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