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參數(shù)資料
| 型號(hào)： | MAX31826MUA+T |
| 廠商： | Maxim Integrated |
| 文件頁數(shù)： | 13/22頁 |
| 文件大?。?/td> | 1648K |
| 描述： | IC TEMP SENSOR DIGITAL 8UMAX |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 系列： | 1-Wire® |
| 功能： | 溫度監(jiān)控系統(tǒng)（傳感器） |
| 傳感器類型： | 內(nèi)部 |
| 感應(yīng)溫度： | -55°C ~ 125°C |
| 精確度： | ±2°C |
| 拓?fù)洌?/td> | 寄存器庫，變簽式暫存器 |
| 輸出類型： | 1-Wire? |
| 輸出警報(bào)： | 無 |
| 輸出風(fēng)扇： | 無 |
| 電源電壓： | 3 V ~ 3.7 V |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-TSSOP，8-MSOP（0.118"，3.00mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-uMAX |
| 包裝： | 帶卷 (TR) |
Maxim Integrated Products 13
MAX31826
1-Wire Digital Temperature Sensor
with 1Kb Lockable EEPROM
Write Scratchpad 2 [0Fh]
This command allows the master to write 8 bytes to the EE
scratchpad. After issuing the Write Scratchpad 2 command,
the master must first provide the 1-byte address for the first
byte of the target EEPROM page, followed by the 8 bytes of
data to be written to the scratchpad for the EEPROM. The
three lower bits [2:0] of the target address byte must be set
to 0. The device automatically increments the address after
every byte it receives. The device computes the CRC of
the received data, including the command (0Fh), the target
address byte, and the 8 data bytes. After having received
a data byte for address 07h, the device shifts out (back to
the master) the computed CRC of the 10-byte stream just
received, allowing the master to verify that the data was
received correctly. Note that, because the device switches
direction from receive to transmit, writes to Scratchpad 2
must start with address bits [2:0] set to 0 and proceed from
0h7h and not beyond.
Copy Scratchpad 2 [55h]
This command allows the master to copy the contents of
an 8-byte page of data from Scratchpad 2 to the 1Kb user
memory. The command is followed by the byte A5h. After
the master writes A5h, the device enters the programming
cycle, saving the data to nonvolatile memory, and does not
respond to further communication for the duration of the
EEPROM write time (t
WR
). During nonparasitic-power mode,
communication with other devices can continue. If the
device is being used in parasite-power mode, within 10Fs
(max) after A5h is issued, the master must enable a strong
pullup on the 1-Wire bus for the duration of the EEPROM
write time (t
WR
) as described in the Powering the MAX31826
section. No other activity can take place on the 1-Wire bus
while the strong pullup is enabled.
Changing only 1 byte of EEPROM is not natively supported
on the device. To achieve this, the master must first read the
8-byte block that contains the single byte to be changed,
and the three lower bits [2:0] of the target address byte
must be 0. The master must then modify the single byte
and write back the 8 bytes with Write Scratchpad 2 and the
same target address. Finally, the master must issue a Copy
Scratchpad 2 command.
Note: The Copy Scratchpad 2 command uses the more
recent of the two 8-bit addresses provided by either the
Write Scratchpad 2 or Read Scratchpad 2 commands as
the EEPROM destination address. The recommended pro-
cedure for writing to EEPROM starting at address 08h is as
follows:
1) Write Scratchpad 2 (address = 08h, 8 data bytes).
2) Read Scratchpad 2 (address = 08h, 8 data bytes). This
reads the data correctly as expected.
3) Copy Scratchpad 2 (0xA5).
4) Data is copied to row 1, which is the correct destination
based on the Write Scratchpad 2 address.
Read Memory [F0h]
This command allows the master to read the contents of the
1Kb memory. The command is followed by the address of
the first byte to be read (00h7Fh). The data transfer starts
with the least significant bit of the first byte and continues
through 7Fh. The master can issue a reset to terminate read-
ing at any time.
Read Power Supply [B4h]
The master device issues this command followed by a read
time slot to determine if any devices on the bus are using
parasite power. During the read time slot, parasite-powered
devices pull the bus low, and externally powered devices
do not pull the bus low. See the Powering the MAX31826
section for more information.
Lock Low Memory and Lock High Memory
The Lock Low Memory and Lock High Memory routines
each lock the contents of eight pages of memory.
Lock Low Memory (bytes 00h3Fh) as follows:
1) Initialize communication by issuing a reset and a ROM
command.
2) Send Write Scratchpad 2 command.
3) Send address 80h as the target address to be written.
4) Send data 55h.
5) Initialize and send Copy Scratchpad 2 command.
6) Issue write token A5h and wait t
WR
.
Locations 003Fh are now locked. Also, location 80h is
locked with value 55h. Location 80h cannot be changed to
alter the lock status of 00h3Fh.
Lock High Memory (bytes 40h7Fh) as follows:
1) Initialize communication by issuing a reset and a ROM
command.
2) Send Write Scratchpad 2 command.
3) Send address 81h as the target address to be written.
4) Send data 55h.
5) Initialize and send Copy Scratchpad 2 command.
6) Issue write token A5h and wait t
WR
.
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