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| 型號： | MAT12 |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 封裝： | TO-78, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 99K |
| 代理商： | MAT12 |
Low Noise, Matched
Dual Monolithic Transistor
Preliminary Technical Data
MAT12
Rev. PrA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityis assumedbyAnalog Devices foritsuse,nor for anyinfringements ofpatents orother
rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
2010 Analog Devices, Inc. All rights reserved.
FEATURES
PIN CONFIGURATION
Low offset voltage (VOS): 50 μV max
Very Low Voltage Noise: 1nV/
√Hz max @ 100Hz
High Gain (hFE):
500 min at IC = 1mA
300 min at IC = 1μA
Excellent Log Conformance: rBE = 0.3 Ω
Low Offset Voltage Drift: 0.1 μV/C max
High Gain Bandwidth Product: 200MHz
Note: Substrate is connected to case on TO-78 package. Substrate is
normally connected to the most negative circuit potential, but can
be floated
GENERAL DESCRIPTION
The design of the MAT12 series of NPN dual monolithic transistors is optimized for very low noise, low drift and
low rBE. Exceptional characteristics of the MAT12 include offset voltage of 50 V max and high current gain (hFE)
which is maintained over a wide range of collector current. Device performance is specified over the full
temperature range as well as at 25
°C.
Input protection diodes are provided across the emitter-base junctions to prevent degradation of the device
characteristics due to reverse-biased emitter current. The substrate is clamped to the most negative emitter by the
parasitic isolation junction created by the protection diodes. This results in complete isolation between the
transistors.
The MAT12 is ideal for applications where low noise is a priority. The MAT12 can be used as an input
stage to make an amplifier with noise voltage of less than 1.0 nV/
√Hz at 100 Hz. Other applications, such as
log/antilog circuits, may use the excellent logging conformity of the MAT12. Typical bulk resistance is only 0.3
Ω to 0.4 Ω. The MAT12 electrical characteristics approach those of an ideal transistor when operated over a
collector current range of 1A to 10 mA.
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| MAT-12 | 功能描述:TERM BARRIER 12CIRC DUAL ROW RoHS:是 類別:連接器，互連式 >> 接線座 - 隔板塊 系列:M 標準包裝:10 系列:Beau™ 38780 端接塊類型:阻隔塊 電路數(shù):15 導線入口數(shù)目:30 間距:0.438"（11.12mm） 行數(shù):2 電流:15A 電壓:300V 線規(guī):14-22 AWG 頂部端子:螺釘 底部端子:焊片 阻擋層類型:雙壁（雙） 特點:法蘭 顏色:黑 包裝:散裝 安裝類型:通孔 工作溫度:- 材料 - 絕緣體:聚對苯二甲酸丁二酯（PBT），玻璃纖維增強型 材料可燃性額定值:UL94 V-0 其它名稱:038780-111538780-1115387801115 |
| MAT12AHZ | 功能描述:IC TRANS DUAL MATCHED NPN TO78-6 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MAT12SS12 | 制造商:HellermannTyton 功能描述:CABLE TIE STEEL 330MM |
| MAT12SS12-SS-NA-C1 | 制造商:HellermannTyton 功能描述:CABLE TIE STEEL 330MM 制造商:HellermannTyton 功能描述:CABLE TIE, STEEL, 330MM 制造商:HELLERMANN TYTON 功能描述:CABLE TIE, STEEL, 330MM; Cable Tie Length:330mm; Cable Tie Width:12mm; Cable Tie Material:Stainless Steel; Cable Tie Colour:Black; Tensile Strength N/m2:445N/mm2; Cable Bundle Diameter Min:10mm; Cable Bundle Diameter Max:90mm; ;RoHS Compliant: Yes |
| MAT12SS7 | 制造商:HellermannTyton 功能描述:CABLE TIE STEEL 330MM |
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